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Triarylamine-based crosslinked hole-transporting material with an ionic dopant for high-performance PEDOT:PSS-free polymer solar cells

A triarylamine-based material DVTPD containing two styryl groups has been developed. Upon isothermal heating at 180 °C for 30 min, DVTPD can be thermally cross-linked to form a solvent-resistant layer to realize the fabrication of solution-processed multilayer devices. The crosslinked DVTPD (denoted...

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Published in:Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2015-01, Vol.3 (24), p.6158-6165
Main Authors: Tsai, Che-En, Liao, Ming-Hung, Chen, Yung-Lung, Cheng, Sheng-Wen, Lai, Yu-Ying, Cheng, Yen-Ju, Hsu, Chain-Shu
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container_title Journal of materials chemistry. C, Materials for optical and electronic devices
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Liao, Ming-Hung
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Cheng, Sheng-Wen
Lai, Yu-Ying
Cheng, Yen-Ju
Hsu, Chain-Shu
description A triarylamine-based material DVTPD containing two styryl groups has been developed. Upon isothermal heating at 180 °C for 30 min, DVTPD can be thermally cross-linked to form a solvent-resistant layer to realize the fabrication of solution-processed multilayer devices. The crosslinked DVTPD (denoted as X-DVTPD) layer possesses not only hole-collecting ability (HOMO = −5.3 eV) but also electron-blocking capability (LUMO = −2.2 eV). By incorporation of an ionic dopant, 4-isopropyl-4′-methyldiphenyliodonium tetrakis(pentafluorophenylborate) (DPITPFB), into the X-DVTPD material (1 : 10 in wt%), a favourable morphology of the dopant/matrix layer was formed and the hole-mobility is significantly improved by three orders of magnitude compared to its non-doped state. This DPITPFB : X-DVTPD (1 : 10 in wt%) layer was employed as the hole-transporting layer to fabricate polymer solar cell devices (PSCs). The E HOMO of the polymer in the active layer relative to the E HOMO of the X-DVTPD (−5.3 eV) governs the hole transportation highly associated with the device performance. The higher-lying E HOMO (−5.0 eV) of P3HT causes a large energy barrier for the hole transportation at the interface, leading to an unsatisfactory efficiency. The E HOMO level of the PTB7 copolymer (−5.15 eV) is closer to −5.3 eV. As a result, the PTB7-based device can achieve 80% of the efficiency obtained from the corresponding PEDOT:PSS-based device. Furthermore, the PBDCPDTFBT copolymer has the same E HOMO (−5.3 eV) with X-DVTPD. Consequently, the PBDCPDTFBT-based device showed a comparable efficiency of 5.3% to the corresponding PEDOT:PSS-based device. More importantly, PNDTDTFBT having the lowest-lying E HOMO of −5.4 eV exhibits superior performance with a high PCE of 6.64%, outperforming its reference PEDOT:PSS-based device. This simple and useful hole-transporting system integrating the crosslinking and doping strategies to replace PEDOT:PSS can be widely used in solution-processed organic electronic devices. A triarylamine-based crosslinked hole-transporting material is integrated with an ionic dopant to achieve high-performance PEDOT:PSS-free polymer solar cells.
doi_str_mv 10.1039/c5tc00714c
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Upon isothermal heating at 180 °C for 30 min, DVTPD can be thermally cross-linked to form a solvent-resistant layer to realize the fabrication of solution-processed multilayer devices. The crosslinked DVTPD (denoted as X-DVTPD) layer possesses not only hole-collecting ability (HOMO = −5.3 eV) but also electron-blocking capability (LUMO = −2.2 eV). By incorporation of an ionic dopant, 4-isopropyl-4′-methyldiphenyliodonium tetrakis(pentafluorophenylborate) (DPITPFB), into the X-DVTPD material (1 : 10 in wt%), a favourable morphology of the dopant/matrix layer was formed and the hole-mobility is significantly improved by three orders of magnitude compared to its non-doped state. This DPITPFB : X-DVTPD (1 : 10 in wt%) layer was employed as the hole-transporting layer to fabricate polymer solar cell devices (PSCs). The E HOMO of the polymer in the active layer relative to the E HOMO of the X-DVTPD (−5.3 eV) governs the hole transportation highly associated with the device performance. The higher-lying E HOMO (−5.0 eV) of P3HT causes a large energy barrier for the hole transportation at the interface, leading to an unsatisfactory efficiency. The E HOMO level of the PTB7 copolymer (−5.15 eV) is closer to −5.3 eV. As a result, the PTB7-based device can achieve 80% of the efficiency obtained from the corresponding PEDOT:PSS-based device. Furthermore, the PBDCPDTFBT copolymer has the same E HOMO (−5.3 eV) with X-DVTPD. Consequently, the PBDCPDTFBT-based device showed a comparable efficiency of 5.3% to the corresponding PEDOT:PSS-based device. More importantly, PNDTDTFBT having the lowest-lying E HOMO of −5.4 eV exhibits superior performance with a high PCE of 6.64%, outperforming its reference PEDOT:PSS-based device. This simple and useful hole-transporting system integrating the crosslinking and doping strategies to replace PEDOT:PSS can be widely used in solution-processed organic electronic devices. 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C, Materials for optical and electronic devices</title><description>A triarylamine-based material DVTPD containing two styryl groups has been developed. Upon isothermal heating at 180 °C for 30 min, DVTPD can be thermally cross-linked to form a solvent-resistant layer to realize the fabrication of solution-processed multilayer devices. The crosslinked DVTPD (denoted as X-DVTPD) layer possesses not only hole-collecting ability (HOMO = −5.3 eV) but also electron-blocking capability (LUMO = −2.2 eV). By incorporation of an ionic dopant, 4-isopropyl-4′-methyldiphenyliodonium tetrakis(pentafluorophenylborate) (DPITPFB), into the X-DVTPD material (1 : 10 in wt%), a favourable morphology of the dopant/matrix layer was formed and the hole-mobility is significantly improved by three orders of magnitude compared to its non-doped state. This DPITPFB : X-DVTPD (1 : 10 in wt%) layer was employed as the hole-transporting layer to fabricate polymer solar cell devices (PSCs). The E HOMO of the polymer in the active layer relative to the E HOMO of the X-DVTPD (−5.3 eV) governs the hole transportation highly associated with the device performance. The higher-lying E HOMO (−5.0 eV) of P3HT causes a large energy barrier for the hole transportation at the interface, leading to an unsatisfactory efficiency. The E HOMO level of the PTB7 copolymer (−5.15 eV) is closer to −5.3 eV. As a result, the PTB7-based device can achieve 80% of the efficiency obtained from the corresponding PEDOT:PSS-based device. Furthermore, the PBDCPDTFBT copolymer has the same E HOMO (−5.3 eV) with X-DVTPD. Consequently, the PBDCPDTFBT-based device showed a comparable efficiency of 5.3% to the corresponding PEDOT:PSS-based device. More importantly, PNDTDTFBT having the lowest-lying E HOMO of −5.4 eV exhibits superior performance with a high PCE of 6.64%, outperforming its reference PEDOT:PSS-based device. This simple and useful hole-transporting system integrating the crosslinking and doping strategies to replace PEDOT:PSS can be widely used in solution-processed organic electronic devices. 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Upon isothermal heating at 180 °C for 30 min, DVTPD can be thermally cross-linked to form a solvent-resistant layer to realize the fabrication of solution-processed multilayer devices. The crosslinked DVTPD (denoted as X-DVTPD) layer possesses not only hole-collecting ability (HOMO = −5.3 eV) but also electron-blocking capability (LUMO = −2.2 eV). By incorporation of an ionic dopant, 4-isopropyl-4′-methyldiphenyliodonium tetrakis(pentafluorophenylborate) (DPITPFB), into the X-DVTPD material (1 : 10 in wt%), a favourable morphology of the dopant/matrix layer was formed and the hole-mobility is significantly improved by three orders of magnitude compared to its non-doped state. This DPITPFB : X-DVTPD (1 : 10 in wt%) layer was employed as the hole-transporting layer to fabricate polymer solar cell devices (PSCs). The E HOMO of the polymer in the active layer relative to the E HOMO of the X-DVTPD (−5.3 eV) governs the hole transportation highly associated with the device performance. The higher-lying E HOMO (−5.0 eV) of P3HT causes a large energy barrier for the hole transportation at the interface, leading to an unsatisfactory efficiency. The E HOMO level of the PTB7 copolymer (−5.15 eV) is closer to −5.3 eV. As a result, the PTB7-based device can achieve 80% of the efficiency obtained from the corresponding PEDOT:PSS-based device. Furthermore, the PBDCPDTFBT copolymer has the same E HOMO (−5.3 eV) with X-DVTPD. Consequently, the PBDCPDTFBT-based device showed a comparable efficiency of 5.3% to the corresponding PEDOT:PSS-based device. More importantly, PNDTDTFBT having the lowest-lying E HOMO of −5.4 eV exhibits superior performance with a high PCE of 6.64%, outperforming its reference PEDOT:PSS-based device. This simple and useful hole-transporting system integrating the crosslinking and doping strategies to replace PEDOT:PSS can be widely used in solution-processed organic electronic devices. A triarylamine-based crosslinked hole-transporting material is integrated with an ionic dopant to achieve high-performance PEDOT:PSS-free polymer solar cells.</abstract><doi>10.1039/c5tc00714c</doi><tpages>8</tpages></addata></record>
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subjects Copolymers
Crosslinking
Devices
Dopants
Molecular orbitals
Photovoltaic cells
Solar cells
Transportation
title Triarylamine-based crosslinked hole-transporting material with an ionic dopant for high-performance PEDOT:PSS-free polymer solar cells
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