Improved microwave absorption performance of modified SiC in the 2-18 GHz frequency range

Aiming to improve the microwave absorption performance of SiC, various methods including doping and changing the shape were adopted. In view of doping, B-doped silicon carbide (B-SiC) with a B content of 3 mass% was prepared via a simple carbothermal reduction method. By using different raw material...

Full description

Saved in:
Bibliographic Details
Published in:CrystEngComm 2017, Vol.19 (3), p.519-527
Main Authors: Chen, Junhong, Liu, Meng, Yang, Tao, Zhai, Famin, Hou, Xinmei, Chou, Kuo-Chih
Format: Article
Language:English
Subjects:
Absorption
Doping
Frequency ranges
Microwave absorption
Microwaves
Nanowires
Reflection
Silicon carbide
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Aiming to improve the microwave absorption performance of SiC, various methods including doping and changing the shape were adopted. In view of doping, B-doped silicon carbide (B-SiC) with a B content of 3 mass% was prepared via a simple carbothermal reduction method. By using different raw materials, SiC both in nanowire and powder forms was obtained. The microwave absorption performance was investigated. The results show that B-SiC nanowires exhibit a far more improved microwave absorption ability in the frequency range of 2-18 GHz compared with SiC nanowires. The effective absorption bandwidth of the reflection loss below −10 dB is 3.52 GHz, and the maximum reflection loss of −37.94 dB at 14 GHz with a thickness of 1.5 mm indicates that B-SiC nanowires could be used as an effective microwave absorbing material. The combination of the enhanced electrical conductivity caused by B doping and the network formed from nanowires contributes to the enhanced microwave absorption. The improved microwave absorption performance of B-SiC nanowires.
ISSN:1466-8033
1466-8033
DOI:10.1039/c6ce02285e