Non-volatile organic ferroelectric memory transistors fabricated using rigid polyimide islands on an elastomer substrate

The authors fabricated stretchable organic ferroelectric memory transistors (OFMTs) on a polydimethylsiloxane substrate using rigid polyimide island structures. The OFMTs exhibited a field-effect mobility of 4 × 10 −2 cm 2 V −1 s −1 and a current on/off ratio of 10 5 with a notably low threshold vol...

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Bibliographic Details
Published in:Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2016-01, Vol.4 (2), p.4485-449
Main Authors: Jung, Soon-Won, Koo, Jae Bon, Park, Chan Woo, Na, Bock Soon, Park, Nae-Man, Oh, Ji-Young, Moon, Yu Gyeong, Lee, Sang Seok, Koo, Kyung-Wan
Format: Article
Language:English
Subjects:
Electronic devices
Ferroelectric materials
Ferroelectricity
Islands
Polyimide resins
Semiconductor devices
Substrates
Transistors
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Summary:The authors fabricated stretchable organic ferroelectric memory transistors (OFMTs) on a polydimethylsiloxane substrate using rigid polyimide island structures. The OFMTs exhibited a field-effect mobility of 4 × 10 −2 cm 2 V −1 s −1 and a current on/off ratio of 10 5 with a notably low threshold voltage. Furthermore, our memory TFTs exhibit excellent mechanical stability, showing no noticeable change in electrical performance up to a large strain of 50%. These results indicated the feasibility of a promising device for stretchable electronic systems. The authors fabricated stretchable organic ferroelectric memory transistors (OFMTs) on a polydimethylsiloxane substrate using rigid polyimide island structures.
ISSN:2050-7526
2050-7534
DOI:10.1039/c6tc00083e