A near-infrared organic light-emitting diode based on an Yb(iii) complex synthesized by vacuum co-depositionElectronic supplementary information (ESI) available: Measurement methods, instruments, synthesis section, film and OLED fabrication methods, NIR emission lifetime (Fig. S1), NIR absorption spectrum (Fig. S2), TG-DTA (Fig. S3), FT-IR-RAS spectra (Fig. S4), the EQE-J characteristics of device B in vis regions (Fig. S5), and current density dependence of EL intensity of device B (Fig. S6). S

• Main Authors: Jinnai, Kazuya, Kabe, Ryota, Adachi, Chihaya
• Format: Article
• Language: English
• ISSN: 1359-7345; 1364-548X
• DOI: 10.1039/c7cc01580a

Yb(DBM) 3 (DPEPO), an emitter, was directly synthesized on a substrate by the vacuum co-deposition of the precursor Yb(DBM) 3 (H 2 O) 2 and the ligand DPEPO. OLEDs incorporating the co-deposited emitting layer (Yb(DBM) 3 (H 2 O) 2  : DPEPO molar ratio = 1 : 1) achieved an η EQE value of 0.15% at 1.0 mA cm −2 . Yb(DBM) 3 (DPEPO), an emitter, was directly synthesized on a substrate by the vacuum co-deposition of the precursor Yb(DBM) 3 (H 2 O) 2 and the ligand DPEPO.