ZnO nanorod arrays grown on an AlN buffer layer and their enhanced ultraviolet emission

n-ZnO nanorods/p-Si heterojunctions with and without an AlN buffer layer were grown. The ultraviolet luminescence of the ZnO nanorods was greatly enhanced through introducing an AlN buffer layer, and this can be attributed to an improvement in the ZnO nanorod crystallinity, and confinement effects f...

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Bibliographic Details
Published in:CrystEngComm 2017, Vol.19 (41), p.685-688
Main Authors: Ali, Amany, Wang, DongBo, Wang, JinZhong, Jiao, ShuJie, Guo, FengYun, Zhang, Yong, Gao, ShiYong, Ni, ShiMing, Luan, ChunYang, Wang, DaiZhe, Zhao, LianCheng
Format: Article
Language:English
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Summary:n-ZnO nanorods/p-Si heterojunctions with and without an AlN buffer layer were grown. The ultraviolet luminescence of the ZnO nanorods was greatly enhanced through introducing an AlN buffer layer, and this can be attributed to an improvement in the ZnO nanorod crystallinity, and confinement effects from the AlN potential barrier layer. The ultraviolet luminescence of ZnO nanorods was greatly enhanced through introducing an AlN buffer layer.
ISSN:1466-8033
1466-8033
DOI:10.1039/c7ce00722a