Tailoring photoelectrochemical properties of semiconducting transition metal dichalcogenide nanolayers with porphyrin functionalization

We report a facile interfacial engineering method that can drastically modulate the photoelectrochemical properties of two-dimensional transition metal dichalcogenide (TMD) semiconductors. We find that the adsorption of Zn-centred protoporphyrins strongly influences the photocurrent, depending on th...

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Bibliographic Details
Published in:Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2017, Vol.5 (43), p.11233-11238
Main Authors: Zhang, Hanyu, Ji, Jaehoon, Gonzalez, Adalberto A, Choi, Jong Hyun
Format: Article
Language:English
Subjects:
Chalcogenides
Energy levels
Photoelectric effect
Photoelectric emission
Zinc
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Summary:We report a facile interfacial engineering method that can drastically modulate the photoelectrochemical properties of two-dimensional transition metal dichalcogenide (TMD) semiconductors. We find that the adsorption of Zn-centred protoporphyrins strongly influences the photocurrent, depending on the relative energy levels of the TMDs against those of the chromophore molecules. We report a facile interfacial engineering method that can drastically modulate the photoelectrochemical properties of two-dimensional transition metal dichalcogenide (TMD) semiconductors.
ISSN:2050-7526
2050-7534
DOI:10.1039/c7tc02861j