Selectable texture in epitaxial ferroelectric BaTiO films integrated with silicon

Ferroelectric BaTiO 3 films have been epitaxially grown by pulsed laser deposition on buffered Si substrates. We show that the BaTiO 3 films' texture is selectable by the appropriate choice of Si wafer orientation and buffer layers. BaTiO 3 films having (00l), (l0l) or (l0l)/(l00) texture prese...

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Bibliographic Details
Published in:CrystEngComm 2018-10, Vol.2 (4), p.6225-6229
Main Authors: Lyu, Jike, Fina, Ignasi, Solanas, Raul, Fontcuberta, Josep, Sánchez, Florencio
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Summary:Ferroelectric BaTiO 3 films have been epitaxially grown by pulsed laser deposition on buffered Si substrates. We show that the BaTiO 3 films' texture is selectable by the appropriate choice of Si wafer orientation and buffer layers. BaTiO 3 films having (00l), (l0l) or (l0l)/(l00) texture present a very flat surface, low current leakage, and sizeable ferroelectric polarization. The films, integrated with silicon, offer opportunities to exploit the anisotropic optical and dielectric properties of ferroelectric BaTiO 3 . The texture of epitaxial ferroelectric BaTiO 3 films on buffered silicon is controlled by selection of the wafer orientation and buffer layers.
ISSN:1466-8033
DOI:10.1039/c8ce01093e