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Phosphinecarboxamide as an unexpected phosphorus precursor in the chemical vapour deposition of zinc phosphide thin films

This paper demonstrates the use of phosphinecarboxamide as a facile phosphorus precursor, which can be used alongside zinc acetate for the chemical vapour deposition (CVD) of adherent and crystalline zinc phosphide films. Thin films of Zn 3 P 2 have a number of potential applications and phosphineca...

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Bibliographic Details
Published in:Dalton transactions : an international journal of inorganic chemistry 2018-07, Vol.47 (28), p.9221-9225
Main Authors: Beddoe, Samuel V. F, Cosham, Samuel D, Kulak, Alexander N, Jupp, Andrew R, Goicoechea, Jose M, Hyett, Geoffrey
Format: Article
Language:English
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Summary:This paper demonstrates the use of phosphinecarboxamide as a facile phosphorus precursor, which can be used alongside zinc acetate for the chemical vapour deposition (CVD) of adherent and crystalline zinc phosphide films. Thin films of Zn 3 P 2 have a number of potential applications and phosphinecarboxamide is a safer and more efficient precursor than the highly toxic, corrosive and flammable phosphine used in previous CVD syntheses. Phosphinecarboxamide and zinc acetate have been used to form thin films of zinc phosphide via aerosol assisted chemical vapour deposition.
ISSN:1477-9226
1477-9234
DOI:10.1039/c8dt00544c