Improving the photoluminescence quantum yields of quantum dot films through a donor/acceptor system for near-IR LEDs

Near-infrared light-emitting diodes (LEDs) show potential for telecommunication and medical applications. Quantum dot nanocrystals (QDs), specifically lead chalcogenides, are candidate LED materials since they exhibit tuneable luminescence across the whole near-infrared region, but their surface str...

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Published in:Materials horizons 2019-01, Vol.6 (1), p.137-143
Main Authors: Davis, Nathaniel. J. L. K, Allardice, Jesse R, Xiao, James, Karani, Arfa, Jellicoe, Tom C, Rao, Akshay, Greenham, Neil C
Format: Article
Language:English
Subjects:
Crosslinking
Embedded systems
Light emitting diodes
Nanocrystals
Near infrared radiation
Organic light emitting diodes
Photoluminescence
Quantum dots
Quantum efficiency
Surface structure
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cited_by cdi_FETCH-LOGICAL-c281t-57677b989b4c191acc23c9a55c65b6b9539c161a58c3279273bd992c0fb2fc3d3
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container_end_page 143
container_issue 1
container_start_page 137
container_title Materials horizons
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creator Davis, Nathaniel. J. L. K
Allardice, Jesse R
Xiao, James
Karani, Arfa
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Rao, Akshay
Greenham, Neil C
description Near-infrared light-emitting diodes (LEDs) show potential for telecommunication and medical applications. Quantum dot nanocrystals (QDs), specifically lead chalcogenides, are candidate LED materials since they exhibit tuneable luminescence across the whole near-infrared region, but their surface structure must be carefully controlled to achieve efficient emission. We demonstrate an efficient donor-acceptor QD system by embedding low-energy QDs with high photoluminescence quantum efficiency (PLQE) into a matrix of higher-energy QDs with lower PLQE. We find that the overall PLQE of densely packed cross-linked QD films can be improved by the incorporation of a relatively small fraction of well-passivated acceptor QDs, also leading to improved LED performance. Excitations are transferred into the isolated low-energy acceptor QDs, where they recombine with high radiative efficiency. The PLQE of QD films can be increased by the incorporation of a relatively small fraction of well-passivated acceptor QDs.
doi_str_mv 10.1039/c8mh01122b
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subjects Crosslinking
Embedded systems
Light emitting diodes
Nanocrystals
Near infrared radiation
Organic light emitting diodes
Photoluminescence
Quantum dots
Quantum efficiency
Surface structure
title Improving the photoluminescence quantum yields of quantum dot films through a donor/acceptor system for near-IR LEDs
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