Graphite-based selectorless RRAM: improvable intrinsic nonlinearity for array applicationsElectronic supplementary information (ESI) available. See DOI: 10.1039/c8nr04766a

• Main Authors: Chen, Ying-Chen, Hu, Szu-Tung, Lin, Chih-Yang, Fowler, Burt, Huang, Hui-Chun, Lin, Chao-Cheng, Kim, Sungjun, Chang, Yao-Feng, Lee, Jack C
• Format: Article
• Language: English
• ISSN: 2040-3364; 2040-3372
• DOI: 10.1039/c8nr04766a

Selectorless graphite-based resistive random-access memory (RRAM) has been demonstrated by utilizing the intrinsic nonlinear resistive switching (RS) characteristics, without an additional selector or transistor for low-power RRAM array application. The low effective dielectric constant value ( k ) layer of graphite or graphite oxide is utilized, which is beneficial in suppressing sneak-path currents in the crossbar RRAM array. The tail-bits with low nonlinearity can be manipulated by the positive voltage pulse, which in turn can alleviate variability and reliability issues. Our results provide additional insights for built-in nonlinearity in 1 R -only selectorless RRAMs, which are applicable to the low-power memory array, ultrahigh density storage, and in-memory neuromorphic computational configurations. Selectorless graphite-based resistive random-access memory (RRAM) has been demonstrated by utilizing the intrinsic nonlinear resistive switching (RS) characteristics, without an additional selector or transistor for low-power RRAM array application.