Homogeneity and tolerance to heat of monolayer MoS on SiO and h-BN

• Published in: RSC advances 2018-04, Vol.8 (23), p.129-1296
• Main Authors: Kim, Ho-Jong, Kim, Daehee, Jung, Suyong, Bae, Myung-Ho, Yi, Sam Nyung, Watanabe, Kenji, Taniguchi, Takashi, Chang, Soo Kyung, Ha, Dong Han
• Format: Article
• ISSN: 2046-2069
• DOI: 10.1039/c8ra01849a

We investigated the homogeneity and tolerance to heat of monolayer MoS 2 using photoluminescence (PL) spectroscopy. For MoS 2 on SiO 2 , the PL spectra of the basal plane differ from those of the edge, but MoS 2 on hexagonal boron nitride (h-BN) was electron-depleted with a homogeneous PL spectra over the entire area. Annealing at 450 °C rendered MoS 2 on SiO 2 homogeneously electron-depleted over the entire area by creating numerous defects; moreover, annealing at 550 °C and subsequent laser irradiation on the MoS 2 monolayer caused a loss of its inherent crystal structure. On the other hand, monolayer MoS 2 on h-BN was preserved up to 550 °C with its PL spectra not much changed compared with MoS 2 on SiO 2 . We performed an experiment to qualitatively compare the binding energies between various layers, and discuss the tolerance of monolayer MoS 2 to heat on the basis of interlayer/interfacial binding energy. We investigated the homogeneity and tolerance to heat of monolayer MoS 2 using photoluminescence (PL) spectroscopy.