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Homogeneity and tolerance to heat of monolayer MoS on SiO and h-BN
We investigated the homogeneity and tolerance to heat of monolayer MoS 2 using photoluminescence (PL) spectroscopy. For MoS 2 on SiO 2 , the PL spectra of the basal plane differ from those of the edge, but MoS 2 on hexagonal boron nitride (h-BN) was electron-depleted with a homogeneous PL spectra ov...
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| Published in: | RSC advances 2018-04, Vol.8 (23), p.129-1296 |
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| Main Authors: | , , , , , , , , |
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| container_end_page | 1296 |
| container_issue | 23 |
| container_start_page | 129 |
| container_title | RSC advances |
| container_volume | 8 |
| creator | Kim, Ho-Jong Kim, Daehee Jung, Suyong Bae, Myung-Ho Yi, Sam Nyung Watanabe, Kenji Taniguchi, Takashi Chang, Soo Kyung Ha, Dong Han |
| description | We investigated the homogeneity and tolerance to heat of monolayer MoS
2
using photoluminescence (PL) spectroscopy. For MoS
2
on SiO
2
, the PL spectra of the basal plane differ from those of the edge, but MoS
2
on hexagonal boron nitride (h-BN) was electron-depleted with a homogeneous PL spectra over the entire area. Annealing at 450 °C rendered MoS
2
on SiO
2
homogeneously electron-depleted over the entire area by creating numerous defects; moreover, annealing at 550 °C and subsequent laser irradiation on the MoS
2
monolayer caused a loss of its inherent crystal structure. On the other hand, monolayer MoS
2
on h-BN was preserved up to 550 °C with its PL spectra not much changed compared with MoS
2
on SiO
2
. We performed an experiment to qualitatively compare the binding energies between various layers, and discuss the tolerance of monolayer MoS
2
to heat on the basis of interlayer/interfacial binding energy.
We investigated the homogeneity and tolerance to heat of monolayer MoS
2
using photoluminescence (PL) spectroscopy. |
| doi_str_mv | 10.1039/c8ra01849a |
| format | article |
| fullrecord | <record><control><sourceid>rsc</sourceid><recordid>TN_cdi_rsc_primary_c8ra01849a</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>c8ra01849a</sourcerecordid><originalsourceid>FETCH-rsc_primary_c8ra01849a3</originalsourceid><addsrcrecordid>eNpjYBAyNNAzNDC21E-2KEo0MLQwsUxkYuA0MjAx0zUyMLPkYOAtLs4yAAIzU0MjM0NOBieP_Nz89NS81MySSoXEvBSFkvyc1KLEvORUIEshIzWxRCE_TSE3Py8_J7EytUjBNz9YIT9PITjTH6w6Q9fJj4eBNS0xpziVF0pzM8i6uYY4e-gWFSfHFxRl5iYWVcYj3GNMSB4Ayaw5Hw</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Homogeneity and tolerance to heat of monolayer MoS on SiO and h-BN</title><source>Open Access: PubMed Central</source><creator>Kim, Ho-Jong ; Kim, Daehee ; Jung, Suyong ; Bae, Myung-Ho ; Yi, Sam Nyung ; Watanabe, Kenji ; Taniguchi, Takashi ; Chang, Soo Kyung ; Ha, Dong Han</creator><creatorcontrib>Kim, Ho-Jong ; Kim, Daehee ; Jung, Suyong ; Bae, Myung-Ho ; Yi, Sam Nyung ; Watanabe, Kenji ; Taniguchi, Takashi ; Chang, Soo Kyung ; Ha, Dong Han</creatorcontrib><description>We investigated the homogeneity and tolerance to heat of monolayer MoS
2
using photoluminescence (PL) spectroscopy. For MoS
2
on SiO
2
, the PL spectra of the basal plane differ from those of the edge, but MoS
2
on hexagonal boron nitride (h-BN) was electron-depleted with a homogeneous PL spectra over the entire area. Annealing at 450 °C rendered MoS
2
on SiO
2
homogeneously electron-depleted over the entire area by creating numerous defects; moreover, annealing at 550 °C and subsequent laser irradiation on the MoS
2
monolayer caused a loss of its inherent crystal structure. On the other hand, monolayer MoS
2
on h-BN was preserved up to 550 °C with its PL spectra not much changed compared with MoS
2
on SiO
2
. We performed an experiment to qualitatively compare the binding energies between various layers, and discuss the tolerance of monolayer MoS
2
to heat on the basis of interlayer/interfacial binding energy.
We investigated the homogeneity and tolerance to heat of monolayer MoS
2
using photoluminescence (PL) spectroscopy.</description><identifier>EISSN: 2046-2069</identifier><identifier>DOI: 10.1039/c8ra01849a</identifier><ispartof>RSC advances, 2018-04, Vol.8 (23), p.129-1296</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Kim, Ho-Jong</creatorcontrib><creatorcontrib>Kim, Daehee</creatorcontrib><creatorcontrib>Jung, Suyong</creatorcontrib><creatorcontrib>Bae, Myung-Ho</creatorcontrib><creatorcontrib>Yi, Sam Nyung</creatorcontrib><creatorcontrib>Watanabe, Kenji</creatorcontrib><creatorcontrib>Taniguchi, Takashi</creatorcontrib><creatorcontrib>Chang, Soo Kyung</creatorcontrib><creatorcontrib>Ha, Dong Han</creatorcontrib><title>Homogeneity and tolerance to heat of monolayer MoS on SiO and h-BN</title><title>RSC advances</title><description>We investigated the homogeneity and tolerance to heat of monolayer MoS
2
using photoluminescence (PL) spectroscopy. For MoS
2
on SiO
2
, the PL spectra of the basal plane differ from those of the edge, but MoS
2
on hexagonal boron nitride (h-BN) was electron-depleted with a homogeneous PL spectra over the entire area. Annealing at 450 °C rendered MoS
2
on SiO
2
homogeneously electron-depleted over the entire area by creating numerous defects; moreover, annealing at 550 °C and subsequent laser irradiation on the MoS
2
monolayer caused a loss of its inherent crystal structure. On the other hand, monolayer MoS
2
on h-BN was preserved up to 550 °C with its PL spectra not much changed compared with MoS
2
on SiO
2
. We performed an experiment to qualitatively compare the binding energies between various layers, and discuss the tolerance of monolayer MoS
2
to heat on the basis of interlayer/interfacial binding energy.
We investigated the homogeneity and tolerance to heat of monolayer MoS
2
using photoluminescence (PL) spectroscopy.</description><issn>2046-2069</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><sourceid/><recordid>eNpjYBAyNNAzNDC21E-2KEo0MLQwsUxkYuA0MjAx0zUyMLPkYOAtLs4yAAIzU0MjM0NOBieP_Nz89NS81MySSoXEvBSFkvyc1KLEvORUIEshIzWxRCE_TSE3Py8_J7EytUjBNz9YIT9PITjTH6w6Q9fJj4eBNS0xpziVF0pzM8i6uYY4e-gWFSfHFxRl5iYWVcYj3GNMSB4Ayaw5Hw</recordid><startdate>20180406</startdate><enddate>20180406</enddate><creator>Kim, Ho-Jong</creator><creator>Kim, Daehee</creator><creator>Jung, Suyong</creator><creator>Bae, Myung-Ho</creator><creator>Yi, Sam Nyung</creator><creator>Watanabe, Kenji</creator><creator>Taniguchi, Takashi</creator><creator>Chang, Soo Kyung</creator><creator>Ha, Dong Han</creator><scope/></search><sort><creationdate>20180406</creationdate><title>Homogeneity and tolerance to heat of monolayer MoS on SiO and h-BN</title><author>Kim, Ho-Jong ; Kim, Daehee ; Jung, Suyong ; Bae, Myung-Ho ; Yi, Sam Nyung ; Watanabe, Kenji ; Taniguchi, Takashi ; Chang, Soo Kyung ; Ha, Dong Han</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-rsc_primary_c8ra01849a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><creationdate>2018</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, Ho-Jong</creatorcontrib><creatorcontrib>Kim, Daehee</creatorcontrib><creatorcontrib>Jung, Suyong</creatorcontrib><creatorcontrib>Bae, Myung-Ho</creatorcontrib><creatorcontrib>Yi, Sam Nyung</creatorcontrib><creatorcontrib>Watanabe, Kenji</creatorcontrib><creatorcontrib>Taniguchi, Takashi</creatorcontrib><creatorcontrib>Chang, Soo Kyung</creatorcontrib><creatorcontrib>Ha, Dong Han</creatorcontrib><jtitle>RSC advances</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kim, Ho-Jong</au><au>Kim, Daehee</au><au>Jung, Suyong</au><au>Bae, Myung-Ho</au><au>Yi, Sam Nyung</au><au>Watanabe, Kenji</au><au>Taniguchi, Takashi</au><au>Chang, Soo Kyung</au><au>Ha, Dong Han</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Homogeneity and tolerance to heat of monolayer MoS on SiO and h-BN</atitle><jtitle>RSC advances</jtitle><date>2018-04-06</date><risdate>2018</risdate><volume>8</volume><issue>23</issue><spage>129</spage><epage>1296</epage><pages>129-1296</pages><eissn>2046-2069</eissn><abstract>We investigated the homogeneity and tolerance to heat of monolayer MoS
2
using photoluminescence (PL) spectroscopy. For MoS
2
on SiO
2
, the PL spectra of the basal plane differ from those of the edge, but MoS
2
on hexagonal boron nitride (h-BN) was electron-depleted with a homogeneous PL spectra over the entire area. Annealing at 450 °C rendered MoS
2
on SiO
2
homogeneously electron-depleted over the entire area by creating numerous defects; moreover, annealing at 550 °C and subsequent laser irradiation on the MoS
2
monolayer caused a loss of its inherent crystal structure. On the other hand, monolayer MoS
2
on h-BN was preserved up to 550 °C with its PL spectra not much changed compared with MoS
2
on SiO
2
. We performed an experiment to qualitatively compare the binding energies between various layers, and discuss the tolerance of monolayer MoS
2
to heat on the basis of interlayer/interfacial binding energy.
We investigated the homogeneity and tolerance to heat of monolayer MoS
2
using photoluminescence (PL) spectroscopy.</abstract><doi>10.1039/c8ra01849a</doi><tpages>7</tpages></addata></record> |
| fulltext | fulltext |
| identifier | EISSN: 2046-2069 |
| ispartof | RSC advances, 2018-04, Vol.8 (23), p.129-1296 |
| issn | 2046-2069 |
| language | |
| recordid | cdi_rsc_primary_c8ra01849a |
| source | Open Access: PubMed Central |
| title | Homogeneity and tolerance to heat of monolayer MoS on SiO and h-BN |
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