Comprehensive studies of temperature and frequency dependent dielectric and a.c. conducting parameters in third generation multi-component glasses

• Published in: RSC advances 2018-07, Vol.8 (45), p.25468-25479
• Main Authors: Chandel, Namrata, Imran, M. M. A, Mehta, Neeraj
• Format: Article
• Language: English
• Subjects: Antimony; Chalcogenides; Chemistry; Conduction; Defects; Density; Dielectric relaxation; Temperature dependence
• ISSN: 2046-2069; 2046-2069
• DOI: 10.1039/c8ra04214d

The dielectric relaxation and thermally assisted a.c. conduction play an important role in understanding the conduction mechanism in chalcogenide glasses. These two phenomena are often the deciding factors of the suitability of chalcogenide materials for particular device applications. Dielectric relaxation studies are important to understand the nature and origin of dielectric losses, which, in effect, may be useful in the determination of structure and defects in solids. The study of thermally assisted a.c. conduction can be used as a tool to understand the nature of defect states and the estimation of their density of defect states. In this paper, therefore, we have studied the metal-induced effects of cadmium (Cd), indium (In) and antimony (Sb) on dielectric relaxation and thermally activated a.c. conduction in ternary Se 80 Te 18 Sn 2 glass. The density of charged defect states in quaternary Se 80 Te 8 Sn 2 M 10 alloys is found to vary with the electro-negativity difference ( ξ M − ξ Te ) of the foreign element M and Te. Further analysis shows that the increasing sequence of the density of charged defects is explained in terms of variation in the lone-pair electrons after the incorporation of Cd, In and Sb. The value of N increases with the rise in LP as a signature of metal-induced effects of Cd, In and Sb.