Intense-pulsed-UV-converted perhydropolysilazane gate dielectrics for organic field-effect transistors and logic gates

• Published in: RSC advances 2019-01, Vol.9 (6), p.3169-3175
• Main Authors: Back, Han Sol, Kim, Min Je, Baek, Jeong Ju, Kim, Do Hwan, Shin, Gyojic, Choi, Kyung Ho, Cho, Jeong Ho
• Format: Article
• Language: English
• Subjects: Chemistry; Dielectric properties; Electrical properties; Field effect transistors; Flexible components; Fourier transforms; Irradiation; Leakage current; Logic circuits; Organic chemistry; Semiconductor devices; Silicon; Silicon dioxide; Transistors; Ultraviolet radiation
• ISSN: 2046-2069; 2046-2069
• DOI: 10.1039/c8ra09831j

We fabricated a high-quality perhydropolysilazane (PHPS)-derived SiO 2 film by intense pulsed UV irradiation and applied it as a gate dielectric layer in high-performance organic field-effect transistors (OFETs) and complementary inverters. The conversion process of PHPS to SiO 2 was optimized by varying the number of intense pulses and applied voltage. The chemical structure and gate dielectric properties of the PHPS-derived SiO 2 films were systematically investigated via Fourier transform infrared spectroscopy and leakage current measurements, respectively. The resulting PHPS-derived SiO 2 gate dielectric layer showed a dielectric constant of 3.8 at 1 MHz and a leakage current density of 9.7 × 10 −12 A cm −2 at 4.0 MV cm −1 . The PHPS-derived SiO 2 film was utilized as a gate dielectric for fabricating benchmark p- and n-channel OFETs based on pentacene and N , N ′-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C 8 ), respectively. The resulting OFETs exhibited good electrical properties, such as carrier mobilities of 0.16 (±0.01) cm 2 V −1 s −1 (for the pentacene OFET) and 0.02 (±0.01) cm 2 V −1 s −1 (for the PTCDI-C 8 OFET) and an on-off current ratio larger than 10 5 . The fabrication of the PHPS-derived SiO 2 gate dielectric layer by a simple solution process and intense pulsed UV irradiation at room temperature serves as a novel approach for the realization of large-area flexible electronics in the flexible device industry of the future. We fabricated a high-quality perhydropolysilazane (PHPS)-derived SiO 2 film by intense pulsed UV irradiation and applied it as a gate dielectric layer in high-performance organic field-effect transistors (OFETs) and complementary inverters.