Tris(ethylene diamine) nickel acetate as a promising precursor for hole transport layer in planar structured perovskite solar cellsElectronic supplementary information (ESI) available. See DOI: 10.1039/c8tc01169a

• Main Authors: Saranin, Danila S, Mazov, Vsevolod N, Luchnikov, Lev O, Lypenko, Dmitry A, Gostishev, Pavel A, Muratov, Dmitry S, Podgorny, Dmitry A, Migunov, Denis M, Didenko, Sergei I, Orlova, Marina N, Kuznetsov, Denis V, Tameev, Alexey R, Di Carlo, Aldo
• Format: Article
• Language: English
• ISSN: 2050-7526; 2050-7534
• DOI: 10.1039/c8tc01169a

Owing hysteresis free characteristics and good reproducibility, inverted p-i-n perovskite solar cells (PSC) are gaining large interest in the photovoltaic field. In this context, the need for stable materials calls for the development of robust transporting layers compatible with the fabrication processes of the solar cell. In this study, we introduce a new precursor, tris(ethylene diamine) nickel acetate, for low temperature (280-300 °C) deposition of NiO hole transporting layer. Full characterization of the deposited NiO film layer was performed through XRD, Raman and Auger spectroscopy. We found a direct correlation between device performance and NiO thickness with maximum efficiency exceeding 15% for the thin NiO (10 nm) layer. NiO/perovskite interface with novel NiO precursor was investigated with Auger profiling for solar cell with PCE > 15%.