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Layer-dependent photoresponse of 2D MoS2 films prepared by pulsed laser deposition
Due to the layered structure and thickness-dependent bandgap of MoS 2 , it is intriguing to investigate the layer-dependent performance of MoS 2 based photodetectors. In this work, centimeter-scale layered MoS 2 films with different layer numbers are achieved by using pulsed laser deposition by cont...
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Published in: | Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2019-03, Vol.7 (9), p.2522-2529 |
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Main Authors: | , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that cite this one |
Online Access: | Get full text |
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Summary: | Due to the layered structure and thickness-dependent bandgap of MoS
2
, it is intriguing to investigate the layer-dependent performance of MoS
2
based photodetectors. In this work, centimeter-scale layered MoS
2
films with different layer numbers are achieved by using pulsed laser deposition by controlling the number of laser pulses. The measurement of transport characteristics in the dark indicates a Schottky barrier contact formed at the Au/MoS
2
interface. The obtained metal-semiconductor-metal MoS
2
based photodetectors present a UV-to-NIR photoresponse with high stability. When the thickness of the film is decreased, the photoresponse of the MoS
2
photodetectors gradually increases from multilayer to bilayer, and more importantly, a notable enhancement in the photoresponse for the monolayer can be observed. In particular, a photoresponsivity of 1.96 A W
−1
is achieved in monolayer MoS
2
samples under illumination with a wavelength of 300 nm. The physical mechanism responsible for the observation is discussed based on the layer dependent Schottky barrier variation and the indirect-to-direct energy band transition in MoS
2
. Our work provides an insight into layer-dependent optical behavior in MoS
2
films, which should be helpful for developing further large-scale photosensing applications in the atomic limit.
Due to the layered structure and thickness-dependent bandgap of MoS
2
, it is intriguing to investigate the layer-dependent performance of MoS
2
based photodetectors. |
---|---|
ISSN: | 2050-7526 2050-7534 |
DOI: | 10.1039/c8tc04612c |