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Inkjet-printed graphene Hall mobility measurements and low-frequency noise characterization
We report room temperature Hall mobility measurements, low temperature magnetoresistance analysis and low-frequency noise characterization of inkjet-printed graphene films on fused quartz and SiO 2 /Si substrates. We found that thermal annealing in vacuum at 450 °C is a necessary step in order to st...
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Published in: | Nanoscale 2020-03, Vol.12 (12), p.678-6716 |
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Main Authors: | , , , , , , , , , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | We report room temperature Hall mobility measurements, low temperature magnetoresistance analysis and low-frequency noise characterization of inkjet-printed graphene films on fused quartz and SiO
2
/Si substrates. We found that thermal annealing in vacuum at 450 °C is a necessary step in order to stabilize the Hall voltage across the devices, allowing their electrical characterization. The printed films present a minimum sheet resistance of 23.3 Ω sq
−1
after annealing, and are n-type doped, with carrier concentrations in the low 10
20
cm
−3
range. The charge carrier mobility is found to increase with increasing film thickness, reaching a maximum value of 33 cm
2
V
−1
s
−1
for a 480 nm-thick film printed on SiO
2
/Si. Low-frequency noise characterization shows a 1/
f
noise behavior and a Hooge parameter in the range of 0.1-1. These results represent the first in-depth electrical and noise characterization of transport in inkjet-printed graphene films, able to provide physical insights on the mechanisms at play.
Inkjet printed graphene is in-depth investigated by means of Hall mobility measurements, low-temperature magnetoresistance analysis, and low frequency noise characterization. |
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ISSN: | 2040-3364 2040-3372 |
DOI: | 10.1039/c9nr09289g |