Synthesis of large-area ultrathin graphdiyne films at an air-water interface and their application in memristors

• Published in: Materials chemistry frontiers 2020-04, Vol.4 (4), p.1268-1273
• Main Authors: Li, Wanhui, Liu, Jie, Yu, Yanxia, Feng, Guangyuan, Song, Yaru, Liang, Qiu, Liu, Lei, Lei, Shengbin, Hu, Wenping
• Format: Article
• Language: English
• Subjects: Ambient temperature; Carbon; Filaments; Memristors; Substrates; Surface roughness; Switching; Thin films
• ISSN: 2052-1537; 2052-1537
• DOI: 10.1039/c9qm00770a

In this work we present for the first time the nonvolatile resistive switching behavior of graphdiyne (GDY) film. We developed a simple approach to fabricate large-area homogeneous GDY films at an air/water interface, via catalytic homocoupling of hexaethynylbenzene at ambient temperature. The high uniformity, large size and low surface roughness of the as obtained GDY films to a large extent simplify the typical complex fabrication processes of carbon-based memristors. The rewritable memristors based on this ultrathin GDY film (about 7 nm) exhibit steady nonvolatile resistance switching behavior with excellent data retention capability (>10 3 s) and high on/off ratio (about 10 3 ). This is the first report on nonvolatile memristors based on pure continuous ultrathin GDY films which show clear write/erase switching properties. The electrical performances of the GDY memristors are significantly improved when Ag is used as a top electrode, which is likely due to the formation of Ag conductive filaments, as observed by HRTEM measurements. This study demonstrates that GDY films are promising candidates for carbon-based nonvolatile memristors. A simple approach was developed to fabricate large-area homogeneous GDY films at an air/water interface; the obtained GDY films exhibit steady nonvolatile resistance switching behavior with excellent data retention capability and high on/off ratio.