Loading…
Defect-induced broadband photodetection of layered γ-InSe nanofilm and its application in near infrared image sensors
In this study, we report on the synthesis of layered γ-In 2 Se 3 for broadband photodetector and near infrared light image sensing applications. The layered γ-In 2 Se 3 nanofilm with a thickness of around 74 nm was deposited onto a n-Si wafer through radio frequency magnetron sputtering. It is found...
Saved in:
| Published in: | Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2019-09, Vol.7 (37), p.11532-11539 |
|---|---|
| Main Authors: | , , , , , , , , , |
| Format: | Article |
| Language: | |
| Online Access: | Get full text |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Summary: | In this study, we report on the synthesis of layered γ-In
2
Se
3
for broadband photodetector and near infrared light image sensing applications. The layered γ-In
2
Se
3
nanofilm with a thickness of around 74 nm was deposited onto a n-Si wafer through radio frequency magnetron sputtering. It is found that the as-assembled γ-In
2
Se
3
/n-Si shows an obvious photovoltaic behavior and can work properly as a self-powered broadband photodetector over a wide range of wavelengths (200-2200 nm). Such a unique spectral response beyond the absorption limit of both intrinsic γ-In
2
Se
3
and n-Si can be ascribed to the existence of defect energy levels between the valence band and the conduction band, as a result of Se substitution of In atoms according to theoretical simulation based on first-principles calculations. Specifically, the γ-In
2
Se
3
/n-Si photodetector has a responsivity of 0.57 A W
−1
, a specific detectivity of 2.6 × 10
12
Jones and a fast response speed (35/115 μs for
τ
r
/
τ
f
) under 808 nm light illumination, respectively, which are slightly better or comparable to other devices with similar geometries. Lastly, it was revealed that the γ-In
2
Se
3
/n-Si heterojunction photodetector can function as an effective near infrared (NIR) light image sensor with a decent spatial resolution, which suggests the great potential of the current device in future NIR optoelectronic systems.
We report on the synthesis of layered γ-In
2
Se
3
nanofilm for broadband photodetector and near infrared light image sensing applications. |
|---|---|
| ISSN: | 2050-7526 2050-7534 |
| DOI: | 10.1039/c9tc04322e |