Synthesis of bismuth sulfide nanobelts for high performance broadband photodetectors

• Published in: Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2020-02, Vol.8 (6), p.212-218
• Main Authors: Xu, Jinzhuo, Li, Henan, Fang, Shaofan, Jiang, Ke, Yao, Huizhen, Fang, Feier, Chen, Fuming, Wang, Ye, Shi, Yumeng
• Format: Article
• Language: English
• Subjects: Absorption; Bismuth sulfides; Broadband; Chemical vapor deposition; Organic chemistry; Photometers; Photosensitivity; Quantum efficiency; Single crystals
• ISSN: 2050-7526; 2050-7534
• DOI: 10.1039/c9tc06780a

Broadband photodetectors are critical to modern industrial systems and scientific applications and have attracted broad attention in recent years. In this paper, high quality single-crystal Bi 2 S 3 nanobelts were prepared by using the chemical vapor deposition (CVD) method. The Bi 2 S 3 nanobelts were further used as photosensitive materials for broadband photo-detection. The as-grown Bi 2 S 3 nanobelts exhibit ultrahigh absorption coefficiency in the ultraviolet (UV) to near infrared (NIR) range. The photodetectors based on a single Bi 2 S 3 nanobelt showed excellent broadband photoresponse performance in the UV to NIR range (from 300 to 1000 nm), including high photoresponsivity up to 201 A W −1 , an ultrafast response speed of ∼50 μs, a high external quantum efficiency of 31 140% and a high detectivity of 2.7 × 10 10 Jones. The superior performance can be attributed to the ultrahigh absorption coefficiency of Bi 2 S 3 nanobelts, as well as the Schottky contact between the Bi 2 S 3 nanobelt and the Au electrode. The present work suggests that the single-crystal Bi 2 S 3 nanobelts possess great potential for the fabrication of high performance broadband photodetectors. We fabricated a superior broadband photodetector based on single crystal Bi 2 S 3 nanobelts with a high sensitivity to UV-near infrared light.