Multi-level flash memory device based on stacked anisotropic ReS-boron nitride-graphene heterostructures

• Published in: Nanoscale 2020-09, Vol.12 (36), p.188-1886
• Main Authors: Wu, Enxiu, Xie, Yuan, Wang, Shijie, Zhang, Daihua, Hu, Xiaodong, Liu, Jing
• Format: Article
• Language: English
• ISSN: 2040-3364; 2040-3372
• DOI: 10.1039/d0nr03965a

Charge-trapping memory devices based on two-dimensional (2D) material heterostructures possess an atomically thin structure and excellent charge transport capability, making them promising candidates for next-generation flash memories to achieve miniaturized size, high storage capacity, fast switch speed, and low power consumption. Here, we report a nonvolatile floating-gate memory device based on an ReS 2 /boron nitride/graphene heterostructure. The implemented ReS 2 memory device displays a large memory window exceeding 100 V, leading to an ultrahigh current ratio over 10 8 between programming and erasing states. The ReS 2 memory device also exhibits an ultrafast switch speed of 1 μs. In addition, the device can endure hundreds of switching cycles and shows stable retention characteristics with ∼40% charge remaining after 10 years. More importantly, taking advantage of its anisotropic electrical properties, a single ReS 2 flake can achieve direction-sensitive multi-level data storage to enhance the data storage density. On the basis of these characteristics, the proposed ReS 2 memory device is potentially able to serve the entire memory device hierarchy, meeting the need for scalability, capacity, speed, retention, and endurance at each level. Direction-sensitive multi-level flash memory based on stacked anisotropic ReS 2 -boron nitride-graphene heterostructures.