Cobalt doped BiVO with rich oxygen vacancies for efficient photoelectrochemical water oxidation

A facile electrodeposition method was developed to prepare Co-BiVO 4 thin films with rich oxygen vacancies. The resulting photoanode exhibited a photocurrent density of 3.5 mA cm −2 1.23 V ( vs. reversible hydrogen electrode (RHE), AM 1.5 G), which is over two times higher than that of undoped BiVO...

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Bibliographic Details
Published in:RSC advances 2020-08, Vol.1 (48), p.28523-28526
Main Authors: Liu, Guoquan, Li, Fei, Zhu, Yong, Li, Jiayuan, Sun, Licheng
Format: Article
Language:English
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Summary:A facile electrodeposition method was developed to prepare Co-BiVO 4 thin films with rich oxygen vacancies. The resulting photoanode exhibited a photocurrent density of 3.5 mA cm −2 1.23 V ( vs. reversible hydrogen electrode (RHE), AM 1.5 G), which is over two times higher than that of undoped BiVO 4 . A facile electrodeposition method was developed to prepare Co-BiVO 4 thin films with rich oxygen vacancies.
ISSN:2046-2069
2046-2069
DOI:10.1039/d0ra01961e