Loading…
A naphthodithiophene-based nonfullerene acceptor for high-performance polymer solar cells with a small energy loss
Introducing intramolecular noncovalent interactions is an effective method for enlarging the conjugated area of the donor core in nonfullerene acceptors (NFAs) to improve the photovoltaic performance. In this study, a novel NFA (NTO-4F) based on a para -substituted naphtho[1,2- b :5,6- b ′]dithiophe...
Saved in:
Published in: | Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2020-05, Vol.8 (19), p.6513-652 |
---|---|
Main Authors: | , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Summary: | Introducing intramolecular noncovalent interactions is an effective method for enlarging the conjugated area of the donor core in nonfullerene acceptors (NFAs) to improve the photovoltaic performance. In this study, a novel NFA (NTO-4F) based on a
para
-substituted naphtho[1,2-
b
:5,6-
b
′]dithiophene core with alkoxy side chains was designed and synthesized, which has a featured oxygen atom at the side chains to facilitate an intramolecular noncovalent S-O interaction with thiophene at the core. NTO-4F exhibits strong absorption in the 600 to 800 nm region with a narrow optical band gap of 1.55 eV, suitable energy levels with a high-lying lowest unoccupied molecular orbital (LUMO) of −3.88 eV, and appropriate crystallinity. As a result, when NTO-4F is blended with the wide bandgap polymer, PM6, as the active layer, the optimized polymer solar cells (PSCs) achieve a power conversion efficiency (PCE) of 11.5% with simultaneously high open-circuit voltage (
V
oc
) of 0.99 V and short-circuit current density (
J
sc
) of 19.1 mA cm
−2
, attributing to the low energy loss of 0.56 eV. Furthermore, PM6:NTO-4F-based devices exhibit excellent tolerance to thermal annealing (TA) treatment with over 10% PCEs for all devices under TA treatment from 140 to 200 °C and over 80% of the initial PCE after thermal treatment at 180 °C for 45 min.
A new non-fullerene acceptor named NTO-4F is developed. The optimal PSC based on PM6:NTO-4F achieves a PCE of 11.5% with simultaneously high open-circuit voltage of 0.99 V and short-circuit current density of 19.1 mA cm
−2
. |
---|---|
ISSN: | 2050-7526 2050-7534 |
DOI: | 10.1039/d0tc00270d |