Enantiomeric perovskite with a dual phase transition at high temperature

Temperature-dependent physical switching materials have been of wide concern for materials chemists. Among them, switchable dielectric perovskite materials have shown huge application potential in the fields of sensing, information storage, and electronics. In particular, for better practical applic...

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Bibliographic Details
Published in:Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2021-02, Vol.9 (6), p.1918-1922
Main Authors: Peng, Hang, Cheng, Hao, Liu, Yu-Hua, Yang, Meng-Juan, Liao, Wei-Qiang, Ai, Yong
Format: Article
Language:English
Subjects:
Chemists
Crystallography
Dielectric properties
Enantiomers
High temperature
Information storage
Perovskites
Phase transitions
Switching
Temperature dependence
Transition temperature
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Summary:Temperature-dependent physical switching materials have been of wide concern for materials chemists. Among them, switchable dielectric perovskite materials have shown huge application potential in the fields of sensing, information storage, and electronics. In particular, for better practical application, obtaining dual-phase-change switching materials with a high phase transition temperature ( T c ) is still a worthwhile issue to study. In this work, we synthesized chiral hybrid organic inorganic perovskites, namely, ( R )-, ( S )- and ( rac )- N , N -dimethyl-3-fluoropyrrolidinium (DMFP) CdCl 3 . The enantiomeric compound undergoes a dual phase transition with a T c of 460 K and 367 K. T c significantly increased by 28 K from 411 K of ( N , N -dimethyl pyrrolidinium) (DMP) CdCl 3 to 439 K of ( rac )-DMFP CdCl 3 . Besides, ( R ) and ( S )-DMFP CdCl 3 are the first example of chiral perovskites that show dual T c with robust switching dielectric characteristics. This work could be a pathway for designing multifunctional chiral perovskite-type switchable materials. Chiral organic-inorganic perovskites show a dual-phase-transition with T c as high as 367 K and 460 K and robust dielectric switching properties.
ISSN:2050-7526
2050-7534
DOI:10.1039/d0tc05380e