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Switching photodiodes based on (2D/3D) PdSe/Si heterojunctions with a broadband spectral response

Noble metal dichalcogenides (NMDs) are two-dimensional (2D) layered materials that exhibit outstanding thickness-dependent tunable-bandgaps that can be suitable for various optoelectronic applications. Here, we developed high-performance switching photodiodes based on mix-dimensional 2D palladium di...

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Published in:Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2021-03, Vol.9 (11), p.3998-47
Main Authors: Aftab, Sikandar, Samiya, Ms, Liao, Wugang, Iqbal, Muhammad Waqas, Ishfaq, Mavra, Ramachandraiah, Karna, Ajmal, Hafiz Muhammad Salman, Haque, Hafiz Mansoor Ul, Yousuf, Saqlain, Ahmed, Zaheer, Usman khan, Muhammad, Rehman, Atteq Ur, Iqbal, Muhammad Zahir
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Summary:Noble metal dichalcogenides (NMDs) are two-dimensional (2D) layered materials that exhibit outstanding thickness-dependent tunable-bandgaps that can be suitable for various optoelectronic applications. Here, we developed high-performance switching photodiodes based on mix-dimensional 2D palladium diselenide (PdSe 2 ) and three-dimensional (3D) silicon (Si) heterojunctions with a broadband spectral response by a mechanical exfoliation technique. We studied the gate-tunable rectifying behavior of n-PdSe 2 /p-Si diodes employing an ionic liquid gate and achieved a maximum diode rectification ratio I f / I r up to ∼1.0 × 10 5 with the lowest value of ideality factor ∼1.22 (at V tg = −2 V). At different temperatures (60 to 300 K), Zener tunneling and avalanche breakdown phenomena were detected at the junction of PdSe 2 -Si. These devices showed excellent self-driven photoresponses over broadband wavelengths from 400 to 1200 nm. The response speed of estimated is 9.2/17.3 μs, which represents a fast photoresponse. Moreover, in our devices, open-circuit voltage ( V OC = 0.6 V) switching behavior is attained with the on/off state of the incident light. Moreover, these devices were attested for dynamic rectification, and this effectively rectified an input alternating-voltage sine wave signal to an output signal. The results of this study indicate that 2D PdSe 2 can be employed for high-performance optoelectronic applications. Noble metal dichalcogenides (NMDs) are two-dimensional (2D) layered materials that exhibit outstanding thickness-dependent tunable-bandgaps that can be suitable for various optoelectronic applications.
ISSN:2050-7526
2050-7534
DOI:10.1039/d0tc05894g