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Raman tensor of zinc-phosphide (ZnP): from polarization measurements to simulation of Raman spectra
Zinc phosphide (Zn 3 P 2 ) is a II-V compound semiconductor with promising photovoltaic and thermoelectric applications. Its complex structure is susceptible to facile defect formation, which plays a key role in further optimization of the material. Raman spectroscopy can be effectively used for def...
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Published in: | Physical chemistry chemical physics : PCCP 2021-12, Vol.24 (1), p.63-72 |
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Main Authors: | , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Zinc phosphide (Zn
3
P
2
) is a II-V compound semiconductor with promising photovoltaic and thermoelectric applications. Its complex structure is susceptible to facile defect formation, which plays a key role in further optimization of the material. Raman spectroscopy can be effectively used for defect characterization. However, the Raman tensor of Zn
3
P
2
, which determines the intensity of Raman peaks and anisotropy of inelastic light scattering, is still unknown. In this paper, we use angle-resolved polarization Raman measurements on stoichiometric monocrystalline Zn
3
P
2
thin films to obtain the Raman tensor of Zn
3
P
2
. This has allowed determination of the Raman tensor elements characteristic for the A
1g
, B
1g
and B
2g
vibrational modes. These results have been compared with the theoretically obtained Raman tensor elements and simulated Raman spectra from the lattice-dynamics calculations using first-principles force constants. Excellent agreement is found between the experimental and simulated Raman spectra of Zn
3
P
2
for various polarization configurations, providing a platform for future characterization of the defects in this material.
Raman tensor of zinc phosphide (Zn
3
P
2
) is determined using angle-resolved polarization Raman measurements and first principles calculations. These results provide a platform for future characterization of the defects in this material. |
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ISSN: | 1463-9076 1463-9084 |
DOI: | 10.1039/d1cp04322f |