Electric field tunability of the electronic properties and contact types in the MoS/SiH heterostructure

• Published in: RSC advances 2022-08, Vol.12 (37), p.24172-24177
• Main Authors: Nguyen, Son-Tung, Nguyen, Chuong V, Nguyen-Ba, Kien, Le-Quoc, Huy, Hieu, Nguyen V, Nguyen, Cuong Q
• Format: Article
• ISSN: 2046-2069
• DOI: 10.1039/d2ra03817j

The generation of layered heterostructures with type-II band alignment is considered to be an effective tool for the design and fabrication of a highly efficient photocatalyst. In this work, we design a novel type-II MoS 2 /SiH HTS and investigate its atomic structure, electronic properties and contact types. In the ground state, the MoS 2 /SiH HTS is proved to be structurally and mechanically stable. The MoS 2 /SiH HTS generates type-II band alignment with separation of the photogenerated carriers. Both the electronic properties and contact type of the MoS 2 /SiH HTS can be modulated by an external electric field. The application of a negative electric field leads to a transformation from type-II to type-I band alignment. While the application of a positive electric field gives rise to a transition from semiconductor to metal in the MoS 2 /SiH HTS. These results could provide useful information for the design and fabrication of photoelectric devices on the MoS 2 /SiH HTS. The generation of layered heterostructures with type-II band alignment is considered to be an effective tool for the design and fabrication of a highly efficient photocatalyst.