Correction: Interfacial engineering of a Mo/HfZrO/Si capacitor using the direct scavenging effect of a thin Ti layer

Correction for 'Interfacial engineering of a Mo/Hf 0.3 Zr 0.7 O 2 /Si capacitor using the direct scavenging effect of a thin Ti layer' by Se Hyun Kim et al. , Chem. Commun. , 2021, 57 , 12452-12455, https://doi.org/10.1039/D1CC04966F .

Saved in:
Bibliographic Details
Published in:Chemical communications (Cambridge, England) England), 2023-02, Vol.59 (18), p.2668-2668
Main Authors: Kim, Se Hyun, Yu, Geun Taek, Park, Geun Hyeong, Lee, Dong Hyun, Park, Ju Yong, Yang, Kun, Lee, Eun Been, Lee, Je In, Park, Min Hyuk
Format: Article
Language:
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Correction for 'Interfacial engineering of a Mo/Hf 0.3 Zr 0.7 O 2 /Si capacitor using the direct scavenging effect of a thin Ti layer' by Se Hyun Kim et al. , Chem. Commun. , 2021, 57 , 12452-12455, https://doi.org/10.1039/D1CC04966F .
ISSN:1359-7345
1364-548X
DOI:10.1039/d3cc90042h