Role of electron and hole doping in the NdNiVO nanostructure

• Published in: Physical chemistry chemical physics : PCCP 2023-11, Vol.25 (46), p.31741-31746
• Main Authors: Basu, Raktima, Kumawat, Reshma, Sahu, Mrinmay, Miah, Abu Bakkar, Mitra, Partha, Mukherjee, Goutam Dev
• Format: Article
• ISSN: 1463-9076; 1463-9084
• DOI: 10.1039/d3cp01409f

Neodymium nickelate, NdNiO 3 , attracts attention due to the simultaneous occurrence of several phase transitions around the same temperature. The electronic properties of NdNiO 3 are extremely complex as structural distortion, electron correlation, charge ordering, and orbital overlapping play significant roles in the transitions. We report the effects of electron and hole injection via doping a single 3d metal, V, in the NdNiO 3 nanostructure to understand the variations in the electronic properties without any structural distortion. A reversible resistivity modulation of more than five orders of magnitude via hole doping and complete suppression of the metal to insulator transition via electron doping is observed along with the switching of major charge carriers. The modulation of electronic properties without any structural distortion and external strain opens up new directions to consider the NdNi 1− x V x O 3 nanostructures applicable as emerging electronic devices. Switching the majority charge carriers and variations in the electronic properties in nanostructured NdNiO 3 by hole and electron injection without any structural transition.