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Improving the efficiency of a CIGS solar cell to above 31% with SbS as a new BSF: a numerical simulation approach by SCAPS-1D

The remarkable performance of copper indium gallium selenide (CIGS)-based double heterojunction (DH) photovoltaic cells is presented in this work. To increase all photovoltaic performance parameters, in this investigation, a novel solar cell structure (FTO/SnS 2 /CIGS/Sb 2 S 3 /Ni) is explored by ut...

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Published in:RSC advances 2024-01, Vol.14 (3), p.1924-1938
Main Authors: Rahman, Md. Ferdous, Chowdhury, Mithun, Marasamy, Latha, Mohammed, Mustafa K. A, Haque, Md. Dulal, Al Ahmed, Sheikh Rashel, Irfan, Ahmad, Chaudhry, Aijaz Rasool, Goumri-Said, Souraya
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container_end_page 1938
container_issue 3
container_start_page 1924
container_title RSC advances
container_volume 14
creator Rahman, Md. Ferdous
Chowdhury, Mithun
Marasamy, Latha
Mohammed, Mustafa K. A
Haque, Md. Dulal
Al Ahmed, Sheikh Rashel
Irfan, Ahmad
Chaudhry, Aijaz Rasool
Goumri-Said, Souraya
description The remarkable performance of copper indium gallium selenide (CIGS)-based double heterojunction (DH) photovoltaic cells is presented in this work. To increase all photovoltaic performance parameters, in this investigation, a novel solar cell structure (FTO/SnS 2 /CIGS/Sb 2 S 3 /Ni) is explored by utilizing the SCAPS-1D simulation software. Thicknesses of the buffer, absorber and back surface field (BSF) layers, acceptor density, defect density, capacitance-voltage ( C - V ), interface defect density, rates of generation and recombination, operating temperature, current density, and quantum efficiency have been investigated for the proposed solar devices with and without BSF. The presence of the BSF layer significantly influences the device's performance parameters including short-circuit current ( J sc ), open-circuit voltage ( V oc ), fill factor (FF), and power conversion efficiency (PCE). After optimization, the simulation results of a conventional CIGS cell (FTO/SnS 2 /CIGS/Ni) have shown a PCE of 22.14% with V oc of 0.91 V, J sc of 28.21 mA cm −2 , and FF of 86.31. Conversely, the PCE is improved to 31.15% with V oc of 1.08 V, J sc of 33.75 mA cm −2 , and FF of 88.50 by introducing the Sb 2 S 3 BSF in the structure of FTO/SnS 2 /CIGS/Sb 2 S 3 /Ni. These findings of the proposed CIGS-based double heterojunction (DH) solar cells offer an innovative method for realization of high-efficiency solar cells that are more promising than the previously reported traditional designs. The remarkable performance of copper indium gallium selenide (CIGS)-based double heterojunction (DH) photovoltaic cells is presented in this work.
doi_str_mv 10.1039/d3ra07893k
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Thicknesses of the buffer, absorber and back surface field (BSF) layers, acceptor density, defect density, capacitance-voltage ( C - V ), interface defect density, rates of generation and recombination, operating temperature, current density, and quantum efficiency have been investigated for the proposed solar devices with and without BSF. The presence of the BSF layer significantly influences the device's performance parameters including short-circuit current ( J sc ), open-circuit voltage ( V oc ), fill factor (FF), and power conversion efficiency (PCE). After optimization, the simulation results of a conventional CIGS cell (FTO/SnS 2 /CIGS/Ni) have shown a PCE of 22.14% with V oc of 0.91 V, J sc of 28.21 mA cm −2 , and FF of 86.31. Conversely, the PCE is improved to 31.15% with V oc of 1.08 V, J sc of 33.75 mA cm −2 , and FF of 88.50 by introducing the Sb 2 S 3 BSF in the structure of FTO/SnS 2 /CIGS/Sb 2 S 3 /Ni. 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These findings of the proposed CIGS-based double heterojunction (DH) solar cells offer an innovative method for realization of high-efficiency solar cells that are more promising than the previously reported traditional designs. The remarkable performance of copper indium gallium selenide (CIGS)-based double heterojunction (DH) photovoltaic cells is presented in this work.</abstract><doi>10.1039/d3ra07893k</doi><tpages>15</tpages></addata></record>
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title Improving the efficiency of a CIGS solar cell to above 31% with SbS as a new BSF: a numerical simulation approach by SCAPS-1D
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