High-performance HS gas sensor utilizing MXene/MoS heterostructure synthesized the Langmuir-Blodgett technique and chemical vapor deposition

• Published in: RSC advances 2024-11, Vol.14 (51), p.37781-37787
• Main Authors: Shin, Jae Hyuk, Jo, Su Hun, Rhyu, Hyejin, Park, Chanwon, Kang, Myung Hyun, Song, Wooseok, Lee, Sun Sook, Lim, Jongsun, Myung, Sung
• Format: Article
• ISSN: 2046-2069
• DOI: 10.1039/d4ra07555b

In this study, we developed an H 2 S gas sensor based on a MXene/MoS 2 heterostructure, using the Langmuir-Blodgett (LB) technique and chemical vapor deposition (CVD). Ti 3 C 2 T x MXene nanosheets were uniformly transferred onto SiO 2 /Si substrates via the LB technique, achieving near-complete coverage. Subsequently, flower-like MoS 2 was grown on the MXene-coated substrate through CVD, with vertical growth observed on the MXene layers. Our hybrid sensors exhibited a significant enhancement in gas response, with the MXene/MoS 2 heterostructure showing a response of 0.5 to H 2 S - approximately five times greater than that of pristine MXene. This improvement is attributed to the formation of a heterojunction, which increases electron mobility and reduces the depletion layer, enabling more efficient gas detection. Furthermore, the sensor demonstrated excellent selectivity for H 2 S over other gases, including H 2 , NO 2 , NH 3 , NO, and VOCs. The combination of the LB technique and CVD not only enhances gas sensor performance but also offers a promising strategy for synthesizing materials for various electrochemical applications. An H 2 S gas sensor was developed using an MXene/MoS 2 heterostructure, fabricated through Langmuir-Blodgett and CVD. The gas sensor showed a 5-fold enhancement in gas response for H 2 S, demonstrating a new approach for advanced electronic applications.