Unraveling extraordinary magnetoresistance in GdFeAl: a comprehensive exploration of transport and magnetism for technological applications

• Published in: Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2024-09, Vol.12 (37), p.14936-14943
• Main Authors: Pal, Koustav, Dey, Suman, Das, I
• Format: Article
• ISSN: 2050-7526; 2050-7534
• DOI: 10.1039/d4tc00803k

Recent advances in science and technology highlight the profound impact of magnetoresistance (MR) in various fields, including magnetic data storage and magnetic sensors. Different scientific and engineering approaches are employed to fine-tune these properties in thin films, single crystals, and bulk materials. However, a specific category of materials shows potential for exhibiting giant MR due to their superzone gap. In this article, we delve into the exploration of GdFe 2 Al 10 , one of the promising members of a rare-earth based aluminide series with the capacity to manifest giant MR. This material, beyond being a simple antiferromagnet, possesses short-range ferromagnetic interactions and undergoes a paramagnetic to antiferromagnetic and an antiferromagnetic to ferromagnetic transition at low temperatures. Our analysis of electrical magnetotransport uncovers the emergence of a superzone gap due to incongruity in magnetic lattice periodicity with the crystal lattice, leading to a remarkable giant MR effect of 33%. This exploration opens up new possibilities for a series of materials displaying giant MR. Recent advances in science and technology highlight the profound impact of magnetoresistance (MR) in various fields, including magnetic data storage and magnetic sensors.