Band crossing evidence in PbSnTe observed by optical transmission measurements

Using high quality epitaxial layers, we have obtained direct evidence of the band inversion in the Pb1-xSn xTe system .The samples, covering the whole composition range, were grown by molecular beam epitaxy on (111)BaF2 substrates. A minimumin the resistivity as a function of temperature was observe...

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Published in:Brazilian journal of physics 1999-12, Vol.29 (4), p.771-774
Main Authors: Ferreira, S. O., Abramof, E., Motisuke, P., Rappl, P. H. O., Closs, H., Ueta, A. Y., Boschetti, C., Bandeira, I. N.
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PHYSICS, MULTIDISCIPLINARY
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container_issue 4
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container_title Brazilian journal of physics
container_volume 29
creator Ferreira, S. O.
Abramof, E.
Motisuke, P.
Rappl, P. H. O.
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Ueta, A. Y.
Boschetti, C.
Bandeira, I. N.
description Using high quality epitaxial layers, we have obtained direct evidence of the band inversion in the Pb1-xSn xTe system .The samples, covering the whole composition range, were grown by molecular beam epitaxy on (111)BaF2 substrates. A minimumin the resistivity as a function of temperature was observed for all samples with Sn composition 0.35
doi_str_mv 10.1590/S0103-97331999000400033
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title Band crossing evidence in PbSnTe observed by optical transmission measurements
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