Carbon doping of InAlAs layers grown by metalorganic vapor phase epitaxy

Carbon doped AlInAs layers grown by low pressure metalorganic vapor phase epitaxy are investigated as a function of growth temperature. Photoluminescence spectra show a significant drop in peak intensity as the growth temperature is reduced, due to the incorporation of non-radiative defects. It is s...

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Bibliographic Details
Published in:Brazilian journal of physics 2002-06, Vol.32 (2a), p.362-365
Main Authors: Ribeiro, M. L. P., Yavich, B., Tribuzy, C. V. B., Souza, P. L.
Format: Article
Language:English
Subjects:
PHYSICS, MULTIDISCIPLINARY
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Summary:Carbon doped AlInAs layers grown by low pressure metalorganic vapor phase epitaxy are investigated as a function of growth temperature. Photoluminescence spectra show a significant drop in peak intensity as the growth temperature is reduced, due to the incorporation of non-radiative defects. It is shown that the C doping is not related to the deterioration of the optical properties of the layers. On the other hand, both the net hole concentration and the conductivity increase as the growth temperature is reduced due to a more efficient C incorporation and a lower incorporation of the passivating H atoms.
ISSN:0103-9733
1678-4448
DOI:10.1590/S0103-97332002000200032