Magnetic field induced absorption in Pb xEu1-xTe magnetic semiconductors

We report an investigation of the optical absorption spectrum, using non-polarized light, in Pb xEu1-xTe, x=0 and x=0.095, epitaxial thick layers grown by molecular beam epitaxy (MBE). The absorption edge is described by a broad band, due to the electronic transitions from the 4f7 of Eu2+ to the sta...

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Bibliographic Details
Published in:Brazilian journal of physics 2004-06, Vol.34 (2b), p.687-689
Main Authors: Hanamoto, L. K., Henriques, A. B., Rappl, P. H. de Oliveira, Oliveira, N. F., Ueta, A. Y., Abramof, E.
Format: Article
Language:English
Subjects:
PHYSICS, MULTIDISCIPLINARY
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Summary:We report an investigation of the optical absorption spectrum, using non-polarized light, in Pb xEu1-xTe, x=0 and x=0.095, epitaxial thick layers grown by molecular beam epitaxy (MBE). The absorption edge is described by a broad band, due to the electronic transitions from the 4f7 of Eu2+ to the states in 4f6 5d configuration, as seen previously in bulk Eu chalcogenides. When a magnetic field is applied, a narrow absorption band (full width ~50 meV) emerges from the broad one. The energy of this absorption peak red shifts when the magnetic field increases, and reaches saturation when the Eu2+ attain ferromagnetic arrangement. This behaviour can be described by a localized excitation model with d - f exchange interaction.
ISSN:0103-9733
1678-4448
DOI:10.1590/S0103-97332004000400044