Manufactured silicon diode used as an internal conversion electrons detector

In this work we have studied the direct detection and spectrometric capabilities for internal conversion electrons of an ion-implanted diode, developed in the framework of R&D programs at CERN, envisaging its use in an electron-gamma coincidence system for nuclear parameters measurements. The be...

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Published in:Brazilian journal of physics 2004-09, Vol.34 (3a), p.973-975
Main Authors: Corrêa, A. A. S., Bueno, Carmen C., Gonçalves, Josemary A.C., Mendes, P. F. P. Rato, Pinto, J. K. C., Souza, J. P. de, Santos, M. D. de S.
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container_issue 3a
container_start_page 973
container_title Brazilian journal of physics
container_volume 34
creator Corrêa, A. A. S.
Bueno, Carmen C.
Gonçalves, Josemary A.C.
Mendes, P. F. P. Rato
Pinto, J. K. C.
Souza, J. P. de
Santos, M. D. de S.
description In this work we have studied the direct detection and spectrometric capabilities for internal conversion electrons of an ion-implanted diode, developed in the framework of R&D programs at CERN, envisaging its use in an electron-gamma coincidence system for nuclear parameters measurements. The best energy resolution obtained until now, 12.6 keV (FWHM) for the 133Ba 320.32 keV electron emission, is sufficiently good to justify the use of this diode for spectrometry of low energy electrons.
doi_str_mv 10.1590/S0103-97332004000500073
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title Manufactured silicon diode used as an internal conversion electrons detector
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