Static dielectric permittivity in gapless solid solutions Hg 1−x Cd x Te

• Published in: Low temperature physics (Woodbury, N.Y.) N.Y.), 2000-11, Vol.26 (11), p.853-856
• Main Authors: Prozorovskiı̆, V. D., Reshidova, I. Yu, Puzynya, A. I.
• Format: Article
• Language: English
• ISSN: 1063-777X; 1090-6517
• DOI: 10.1063/1.1330602

Results are presented from a comprehensive study of helicon interferometry, nonresonant cyclotron absorption, and the Shubnikov–de Haas effect at microwave frequencies in the compound HgTe and in Hg 1−x Cd x Te solid solutions. Analysis of the experimental results and the already existing theoretical concepts suggests that in the gapless semiconductor HgTe and its solid solutions the static dielectric permittivity ε s depends on the concentration of conduction electrons and the band parameters. Anomalous behavior of ε s (x) is observed in the concentration interval 0.155⩽x⩽0.2 and is attributed to a change in the structure of the edges of the conduction and valence bands in Hg 1−x Cd x Te .