Effects of capping on the Ga 1 − x Mn x As magnetic depth profile

Annealing can increase the Curie temperature and net magnetization in uncapped Ga 1 − x Mn x As films, effects that are suppressed when the films are capped with GaAs. Previous polarized neutron reflectometry (PNR) studies of uncapped Ga 1 − x Mn x As revealed a pronounced magnetization gradient tha...

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Published in:Applied physics letters 2005-02, Vol.86 (7), p.072506-072506-3
Main Authors: Kirby, B. J., Borchers, J. A., Rhyne, J. J., O'Donovan, K. V., Wojtowicz, T., Liu, X., Ge, Z., Shen, S., Furdyna, J. K.
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Summary:Annealing can increase the Curie temperature and net magnetization in uncapped Ga 1 − x Mn x As films, effects that are suppressed when the films are capped with GaAs. Previous polarized neutron reflectometry (PNR) studies of uncapped Ga 1 − x Mn x As revealed a pronounced magnetization gradient that was reduced after annealing. We have extended this study to Ga 1 − x Mn x As capped with GaAs. We observe no increase in Curie temperature or net magnetization upon annealing. Furthermore, PNR measurements indicate that annealing produces minimal differences in the depth-dependent magnetization, as both as-grown and annealed films feature a significant magnetization gradient. These results suggest that the GaAs cap inhibits redistribution of interstitial Mn impurities during annealing.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1867292