Polarization switching kinetics of epitaxial Pb ( Zr 0.4 Ti 0.6 ) O 3 thin films

The polarization switching kinetics of epitaxial Pb ( Zr 0.4 Ti 0.6 ) O 3 thin films were investigated by measuring write pulse-width dependences of switched polarization Δ P ( t ) under various applied electric fields. It was found that Δ P ( t ) follows the predictions of the Kolmogorov-Avrami-Ish...

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Bibliographic Details
Published in:Applied physics letters 2005-02, Vol.86 (9), p.092905-092905-3
Main Authors: So, Y. W., Kim, D. J., Noh, T. W., Yoon, Jong-Gul, Song, T. K.
Format: Article
Language:English
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Summary:The polarization switching kinetics of epitaxial Pb ( Zr 0.4 Ti 0.6 ) O 3 thin films were investigated by measuring write pulse-width dependences of switched polarization Δ P ( t ) under various applied electric fields. It was found that Δ P ( t ) follows the predictions of the Kolmogorov-Avrami-Ishibashi model quite well. However, the detailed behaviors of Δ P ( t ) were different for low and high electric field regions, which separated out around 220 kV ∕ cm . The coercive field also showed different frequency dependences depending on the region. These differences were attributed to changes in the polarization switching kinetics. A possible origin of the switching kinetics changes is also discussed.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1870126