Photoluminescence of silicon quantum dots in silicon nitride grownby NH 3 and SiH 4

The photoluminescence (PL) property of crystalline silicon quantum dots (Si QDs) in silicon nitride grown by using ammonia and silane gases is reported. The peak position of PL could be controlled in the wavelength range from 450 to 700 nm by adjusting the flow rates of ammonia and silane gases. The...

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Bibliographic Details
Published in:Applied physics letters 2005-02, Vol.86 (9), p.091908-091908-3
Main Authors: Kim, Baek-Hyun, Cho, Chang-Hee, Kim, Tae-Wook, Park, Nae-Man, Sung, Gun Yong, Park, Seong-Ju
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Summary:The photoluminescence (PL) property of crystalline silicon quantum dots (Si QDs) in silicon nitride grown by using ammonia and silane gases is reported. The peak position of PL could be controlled in the wavelength range from 450 to 700 nm by adjusting the flow rates of ammonia and silane gases. The PL intensity of Si QDs grown by ammonia was more intense compared to that of Si QDs grown by nitrogen gas. To investigate the role of hydrogen in the PL enhancement, the Si QDs grown by nitrogen gas were postannealed under hydrogen ambient. The enhancement in PL intensity was attributed to the hydrogen passivation of dangling bonds related to silicon and/or nitrogen at the interface of Si QDs and silicon nitride.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1872211