Microwave dielectric relaxation of the polycrystalline ( Ba , Sr ) Ti O 3 thin films

The microwave dielectric properties of the ( Ba , Sr ) Ti O 3 thin films annealed at various oxygen pressures ranging from 5 to 500 mTorr were investigated over the frequency range 0.5 - 5 GHz using a circular-patch capacitor geometry. The dielectric constant ( ε ) followed Curie-von Schweidler rela...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2005-04, Vol.86 (18), p.182904-182904-3
Main Authors: Moon, Taeho, Lee, Byungjoo, Kim, Tae-Gon, Oh, Jeongmin, Noh, Young Woo, Nam, Sangwook, Park, Byungwoo
Format: Article
Language:
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The microwave dielectric properties of the ( Ba , Sr ) Ti O 3 thin films annealed at various oxygen pressures ranging from 5 to 500 mTorr were investigated over the frequency range 0.5 - 5 GHz using a circular-patch capacitor geometry. The dielectric constant ( ε ) followed Curie-von Schweidler relaxation in the microwave-frequency range, and the degree of relaxation corresponded qualitatively with the measured dielectric loss ( tan δ ) . As the oxygen pressure varied, the dielectric loss had a maximum value of ∼ 0.03 at 100 mTorr , and its behavior was correlated with the Raman strength of the polar modes.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1923760