In situ resistance measurements of epitaxial cobalt silicide nanowireson Si(110)

We have performed in situ resistance measurements for individual epitaxial CoSi 2 nanowires (NWs) (approximately 60 nm wide and 5 μ m long) formed on a Si(110) surface. Two- and four-point probe measurements were done with a multitip scanning tunneling microscope at room temperature. The NWs were we...

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Bibliographic Details
Published in:Applied physics letters 2005-06, Vol.86 (23), p.233108-233108-3
Main Authors: Okino, Hiroyuki, Matsuda, Iwao, Hobara, Rei, Hosomura, Yoshikazu, Hasegawa, Shuji, Bennett, P. A.
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Summary:We have performed in situ resistance measurements for individual epitaxial CoSi 2 nanowires (NWs) (approximately 60 nm wide and 5 μ m long) formed on a Si(110) surface. Two- and four-point probe measurements were done with a multitip scanning tunneling microscope at room temperature. The NWs were well isolated from the substrate by a Schottky barrier with zero-bias resistance of 10 7 Ω . The resistivity of the NWs was 30 μ Ω cm , which is similar to that for high-quality epitaxial films. The NW resistance was essentially unchanged after exposure to air.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1948519