Growth of single crystal ZnO nanorods on GaN using an aqueous solution method

Uniformly distributed ZnO nanorods with diameter 80–120nm and 2μm long have been grown at low temperatures on gallium nitride (GaN) by using the inexpensive aqueous solution method. The formation of the ZnO nanorods and the growth parameters are controlled by reactant concentration, temperature and...

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Bibliographic Details
Published in:Applied physics letters 2005-09, Vol.87 (10), p.101908-101908-3
Main Authors: Le, H. Q., Chua, S. J., Koh, Y. W., Loh, K. P., Chen, Z., Thompson, C. V., Fitzgerald, E. A.
Format: Article
Language:English
Subjects:
Aqueous solutions
Crystal growth
Diameters
Gallium nitrides
Low temperature
Nanorods
Photoluminescence
Room temperature
Single crystals
Zinc oxide
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Summary:Uniformly distributed ZnO nanorods with diameter 80–120nm and 2μm long have been grown at low temperatures on gallium nitride (GaN) by using the inexpensive aqueous solution method. The formation of the ZnO nanorods and the growth parameters are controlled by reactant concentration, temperature and pH. No catalyst is required. The x-ray diffraction (XRD) and transmission electron microscopy (TEM) studies show that the ZnO nanorods are single crystals and they grow along the c axis of the crystal plane. The room temperature photoluminescence (PL) measurements have shown ultraviolet peaks at 388nm with high intensity, which are comparable to those found in high quality ZnO films. The mechanism of the nanorod growth in the aqueous solution is also proposed. At the request of the authors, this article is being retracted effective 8 December 2010.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2041833