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Enhanced modulation rate in platinum-diffused resonant-cavitylight-emitting diodes
This study is focused on the modulation response of resonant-cavity light-emitting diodes (RCLEDs). Platinum (Pt) atoms are diffused into the 660 nm RCLED epitaxial layers to increase the concentration of recombination centers and to improve the modulation speed. The RCLED has an AlInGaP multi-quant...
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| Published in: | Journal of applied physics 2005-11, Vol.98 (9), p.093504-093504-5 |
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| Main Authors: | , , , |
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| cites | cdi_FETCH-scitation_primary_10_1063_1_2125119Enhanced_modulation3 |
| container_end_page | 093504-5 |
| container_issue | 9 |
| container_start_page | 093504 |
| container_title | Journal of applied physics |
| container_volume | 98 |
| creator | Chang, L. B. Yeh, D. H. Hsieh, L. Z. Zeng, S. H. |
| description | This study is focused on the modulation response of resonant-cavity light-emitting diodes (RCLEDs). Platinum (Pt) atoms are diffused into the
660
nm
RCLED epitaxial layers to increase the concentration of recombination centers and to improve the modulation speed. The RCLED has an AlInGaP multi-quantum-well active layer which was embedded into AlGaAs-distributed Bragg reflectors to form a one-wavelength
(
1
-
λ
)
optical resonator. Afterwards, the deep-level Pt impurity was diffused into the RCLED and an improved average rise time, from
18.07
to
12.21
ns
, was obtained. The corresponding modulation frequency can be increased from
19.54
to
30.21
MHz
. |
| doi_str_mv | 10.1063/1.2125119 |
| format | article |
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660
nm
RCLED epitaxial layers to increase the concentration of recombination centers and to improve the modulation speed. The RCLED has an AlInGaP multi-quantum-well active layer which was embedded into AlGaAs-distributed Bragg reflectors to form a one-wavelength
(
1
-
λ
)
optical resonator. Afterwards, the deep-level Pt impurity was diffused into the RCLED and an improved average rise time, from
18.07
to
12.21
ns
, was obtained. The corresponding modulation frequency can be increased from
19.54
to
30.21
MHz
.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.2125119</identifier><identifier>CODEN: JAPIAU</identifier><publisher>American Institute of Physics</publisher><ispartof>Journal of applied physics, 2005-11, Vol.98 (9), p.093504-093504-5</ispartof><rights>2005 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-scitation_primary_10_1063_1_2125119Enhanced_modulation3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Chang, L. B.</creatorcontrib><creatorcontrib>Yeh, D. H.</creatorcontrib><creatorcontrib>Hsieh, L. Z.</creatorcontrib><creatorcontrib>Zeng, S. H.</creatorcontrib><title>Enhanced modulation rate in platinum-diffused resonant-cavitylight-emitting diodes</title><title>Journal of applied physics</title><description>This study is focused on the modulation response of resonant-cavity light-emitting diodes (RCLEDs). Platinum (Pt) atoms are diffused into the
660
nm
RCLED epitaxial layers to increase the concentration of recombination centers and to improve the modulation speed. The RCLED has an AlInGaP multi-quantum-well active layer which was embedded into AlGaAs-distributed Bragg reflectors to form a one-wavelength
(
1
-
λ
)
optical resonator. Afterwards, the deep-level Pt impurity was diffused into the RCLED and an improved average rise time, from
18.07
to
12.21
ns
, was obtained. The corresponding modulation frequency can be increased from
19.54
to
30.21
MHz
.</description><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><sourceid/><recordid>eNqljksKwjAURYMoWD8Dd5ANRN9rqW0GjkRxLM5DaFJ90qalSQV37wfFBTi6XDiXexhbICwR1skKlzHGKaIcsAghlyJLUxiyCCBGkctMjtnE-ysAYp7IiB137qJdYQ2vG9NXOlDjeKeD5eR4--qur4Whsuz9E-qsb5x2QRT6RuFe0fkShK0pPLkzN9QY62dsVOrK2_knp2yz3522B-ELCu8D1XZU6-6uENTLWqH6WH9t1M8m-Xf_AMlBWJA</recordid><startdate>20051103</startdate><enddate>20051103</enddate><creator>Chang, L. B.</creator><creator>Yeh, D. H.</creator><creator>Hsieh, L. Z.</creator><creator>Zeng, S. H.</creator><general>American Institute of Physics</general><scope/></search><sort><creationdate>20051103</creationdate><title>Enhanced modulation rate in platinum-diffused resonant-cavitylight-emitting diodes</title><author>Chang, L. B. ; Yeh, D. H. ; Hsieh, L. Z. ; Zeng, S. H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-scitation_primary_10_1063_1_2125119Enhanced_modulation3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><creationdate>2005</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chang, L. B.</creatorcontrib><creatorcontrib>Yeh, D. H.</creatorcontrib><creatorcontrib>Hsieh, L. Z.</creatorcontrib><creatorcontrib>Zeng, S. H.</creatorcontrib><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chang, L. B.</au><au>Yeh, D. H.</au><au>Hsieh, L. Z.</au><au>Zeng, S. H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Enhanced modulation rate in platinum-diffused resonant-cavitylight-emitting diodes</atitle><jtitle>Journal of applied physics</jtitle><date>2005-11-03</date><risdate>2005</risdate><volume>98</volume><issue>9</issue><spage>093504</spage><epage>093504-5</epage><pages>093504-093504-5</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>This study is focused on the modulation response of resonant-cavity light-emitting diodes (RCLEDs). Platinum (Pt) atoms are diffused into the
660
nm
RCLED epitaxial layers to increase the concentration of recombination centers and to improve the modulation speed. The RCLED has an AlInGaP multi-quantum-well active layer which was embedded into AlGaAs-distributed Bragg reflectors to form a one-wavelength
(
1
-
λ
)
optical resonator. Afterwards, the deep-level Pt impurity was diffused into the RCLED and an improved average rise time, from
18.07
to
12.21
ns
, was obtained. The corresponding modulation frequency can be increased from
19.54
to
30.21
MHz
.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.2125119</doi></addata></record> |
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| issn | 0021-8979 1089-7550 |
| language | |
| recordid | cdi_scitation_primary_10_1063_1_2125119Enhanced_modulation |
| source | American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list) |
| title | Enhanced modulation rate in platinum-diffused resonant-cavitylight-emitting diodes |
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