Terahertz radiation from heavy-ion-irradiated In 0.53 Ga 0.47 As photoconductive antenna excited at 1.55 μ m

We investigate terahertz (THz) emission from heavy-ion-irradiated In 0.53 Ga 0.47 As photoconductive antennas excited at 1550 nm. The carrier lifetime in the highly irradiated In 0.53 Ga 0.47 As layer is less than 200 fs, the steady-state mobility is 490 cm 2 V − 1 s − 1 , and the dark resistivity i...

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Bibliographic Details
Published in:Applied physics letters 2005-11, Vol.87 (19), p.193510-193510-3
Main Authors: Chimot, N., Mangeney, J., Joulaud, L., Crozat, P., Bernas, H., Blary, K., Lampin, J. F.
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Summary:We investigate terahertz (THz) emission from heavy-ion-irradiated In 0.53 Ga 0.47 As photoconductive antennas excited at 1550 nm. The carrier lifetime in the highly irradiated In 0.53 Ga 0.47 As layer is less than 200 fs, the steady-state mobility is 490 cm 2 V − 1 s − 1 , and the dark resistivity is 3 Ω cm . The spectrum of the electric field radiating from the Br + -irradiated In 0.53 Ga 0.47 As antenna extends beyond 2 THz. The THz electric field magnitude is shown to saturate at high optical pump fluence, and the saturation fluence level increases with the irradiation dose, indicating that defect center scattering has a significant contribution to the transient mobility.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2126110