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Suppression of ferromagnetism due to hole doping in Zn 1 − x Cr x Te grownby molecular-beam epitaxy
Electric and magnetic properties were investigated on p -type Zn 1 − x Cr x Te doped with nitrogen (N) as an acceptor. Thin films of p - Zn 1 − x Cr x Te ( x ≦ 0.09 ) were grown by molecular-beam epitaxy with the supply of N 2 gas excited by rf plasma. With the increase of Cr composition x at an alm...
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Published in: | Applied physics letters 2005-11, Vol.87 (19), p.192116-192116-3 |
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container_end_page | 192116-3 |
container_issue | 19 |
container_start_page | 192116 |
container_title | Applied physics letters |
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creator | Ozaki, N. Okabayashi, I. Kumekawa, T. Nishizawa, N. Marcet, S. Kuroda, S. Takita, K. |
description | Electric and magnetic properties were investigated on
p
-type
Zn
1
−
x
Cr
x
Te
doped with nitrogen (N) as an acceptor. Thin films of
p
-
Zn
1
−
x
Cr
x
Te
(
x
≦
0.09
)
were grown by molecular-beam epitaxy with the supply of
N
2
gas excited by rf plasma. With the increase of Cr composition
x
at an almost fixed N concentration of the order of
10
20
cm
−
3
, the temperature dependence of resistivity changed from metallic behavior to an insulating one, accompanied with a significant decrease of the hole concentration. The magnetization measurements revealed that ferromagnetic behaviors observed in undoped
Zn
1
−
x
Cr
x
Te
were suppressed due to the nitrogen doping; with N concentrations of the order of
10
20
cm
−
3
, hysteresis loops in the magnetization curve disappeared, the magnitude of magnetization decreased, and the ferromagnetic transition were not observed down to 2 K according to the Arrott plot analysis. These experimental findings are discussed on the basis of the ferromagnetic double exchange interaction which is considered to work on the Cr
3
d
impurity level formed in the band gap of ZnTe. |
doi_str_mv | 10.1063/1.2130387 |
format | article |
fullrecord | <record><control><sourceid>scitation</sourceid><recordid>TN_cdi_scitation_primary_10_1063_1_2130387Suppression_of_ferro</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>apl</sourcerecordid><originalsourceid>FETCH-scitation_primary_10_1063_1_2130387Suppression_of_ferro3</originalsourceid><addsrcrecordid>eNqljz1uAjEQhS0UJDaQghvMBRY8WLDQpEFB6UNFYxmYXRytf2TvKuwNUnNEToITUdDTvNHTG828j7Ex8gnyhZjiZIaCi2XRYxnyosgF4vKFZZxzkS9Wcxyw1xi_k53PhMgYfbXeB4pROwuuhJJCcEZVlhodDRxbgsbBydUER-e1rUBb2FlAuP5e4AzrkGRLUAX3Y_cdmLR5aGsV8j0pA-R1o87diPVLVUd6u88he998bNefeTykvEm_pQ_aqNBJ5PIPRKK8gzwUlK6U_wXF0wduGZBftg</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Suppression of ferromagnetism due to hole doping in Zn 1 − x Cr x Te grownby molecular-beam epitaxy</title><source>American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list)</source><source>AIP_美国物理联合会现刊(与NSTL共建)</source><creator>Ozaki, N. ; Okabayashi, I. ; Kumekawa, T. ; Nishizawa, N. ; Marcet, S. ; Kuroda, S. ; Takita, K.</creator><creatorcontrib>Ozaki, N. ; Okabayashi, I. ; Kumekawa, T. ; Nishizawa, N. ; Marcet, S. ; Kuroda, S. ; Takita, K.</creatorcontrib><description>Electric and magnetic properties were investigated on
p
-type
Zn
1
−
x
Cr
x
Te
doped with nitrogen (N) as an acceptor. Thin films of
p
-
Zn
1
−
x
Cr
x
Te
(
x
≦
0.09
)
were grown by molecular-beam epitaxy with the supply of
N
2
gas excited by rf plasma. With the increase of Cr composition
x
at an almost fixed N concentration of the order of
10
20
cm
−
3
, the temperature dependence of resistivity changed from metallic behavior to an insulating one, accompanied with a significant decrease of the hole concentration. The magnetization measurements revealed that ferromagnetic behaviors observed in undoped
Zn
1
−
x
Cr
x
Te
were suppressed due to the nitrogen doping; with N concentrations of the order of
10
20
cm
−
3
, hysteresis loops in the magnetization curve disappeared, the magnitude of magnetization decreased, and the ferromagnetic transition were not observed down to 2 K according to the Arrott plot analysis. These experimental findings are discussed on the basis of the ferromagnetic double exchange interaction which is considered to work on the Cr
3
d
impurity level formed in the band gap of ZnTe.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.2130387</identifier><identifier>CODEN: APPLAB</identifier><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2005-11, Vol.87 (19), p.192116-192116-3</ispartof><rights>2005 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-scitation_primary_10_1063_1_2130387Suppression_of_ferro3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.2130387$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,780,782,784,795,27924,27925,76255</link.rule.ids></links><search><creatorcontrib>Ozaki, N.</creatorcontrib><creatorcontrib>Okabayashi, I.</creatorcontrib><creatorcontrib>Kumekawa, T.</creatorcontrib><creatorcontrib>Nishizawa, N.</creatorcontrib><creatorcontrib>Marcet, S.</creatorcontrib><creatorcontrib>Kuroda, S.</creatorcontrib><creatorcontrib>Takita, K.</creatorcontrib><title>Suppression of ferromagnetism due to hole doping in Zn 1 − x Cr x Te grownby molecular-beam epitaxy</title><title>Applied physics letters</title><description>Electric and magnetic properties were investigated on
p
-type
Zn
1
−
x
Cr
x
Te
doped with nitrogen (N) as an acceptor. Thin films of
p
-
Zn
1
−
x
Cr
x
Te
(
x
≦
0.09
)
were grown by molecular-beam epitaxy with the supply of
N
2
gas excited by rf plasma. With the increase of Cr composition
x
at an almost fixed N concentration of the order of
10
20
cm
−
3
, the temperature dependence of resistivity changed from metallic behavior to an insulating one, accompanied with a significant decrease of the hole concentration. The magnetization measurements revealed that ferromagnetic behaviors observed in undoped
Zn
1
−
x
Cr
x
Te
were suppressed due to the nitrogen doping; with N concentrations of the order of
10
20
cm
−
3
, hysteresis loops in the magnetization curve disappeared, the magnitude of magnetization decreased, and the ferromagnetic transition were not observed down to 2 K according to the Arrott plot analysis. These experimental findings are discussed on the basis of the ferromagnetic double exchange interaction which is considered to work on the Cr
3
d
impurity level formed in the band gap of ZnTe.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><sourceid/><recordid>eNqljz1uAjEQhS0UJDaQghvMBRY8WLDQpEFB6UNFYxmYXRytf2TvKuwNUnNEToITUdDTvNHTG828j7Ex8gnyhZjiZIaCi2XRYxnyosgF4vKFZZxzkS9Wcxyw1xi_k53PhMgYfbXeB4pROwuuhJJCcEZVlhodDRxbgsbBydUER-e1rUBb2FlAuP5e4AzrkGRLUAX3Y_cdmLR5aGsV8j0pA-R1o87diPVLVUd6u88he998bNefeTykvEm_pQ_aqNBJ5PIPRKK8gzwUlK6U_wXF0wduGZBftg</recordid><startdate>20051104</startdate><enddate>20051104</enddate><creator>Ozaki, N.</creator><creator>Okabayashi, I.</creator><creator>Kumekawa, T.</creator><creator>Nishizawa, N.</creator><creator>Marcet, S.</creator><creator>Kuroda, S.</creator><creator>Takita, K.</creator><general>American Institute of Physics</general><scope/></search><sort><creationdate>20051104</creationdate><title>Suppression of ferromagnetism due to hole doping in Zn 1 − x Cr x Te grownby molecular-beam epitaxy</title><author>Ozaki, N. ; Okabayashi, I. ; Kumekawa, T. ; Nishizawa, N. ; Marcet, S. ; Kuroda, S. ; Takita, K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-scitation_primary_10_1063_1_2130387Suppression_of_ferro3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><creationdate>2005</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ozaki, N.</creatorcontrib><creatorcontrib>Okabayashi, I.</creatorcontrib><creatorcontrib>Kumekawa, T.</creatorcontrib><creatorcontrib>Nishizawa, N.</creatorcontrib><creatorcontrib>Marcet, S.</creatorcontrib><creatorcontrib>Kuroda, S.</creatorcontrib><creatorcontrib>Takita, K.</creatorcontrib><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ozaki, N.</au><au>Okabayashi, I.</au><au>Kumekawa, T.</au><au>Nishizawa, N.</au><au>Marcet, S.</au><au>Kuroda, S.</au><au>Takita, K.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Suppression of ferromagnetism due to hole doping in Zn 1 − x Cr x Te grownby molecular-beam epitaxy</atitle><jtitle>Applied physics letters</jtitle><date>2005-11-04</date><risdate>2005</risdate><volume>87</volume><issue>19</issue><spage>192116</spage><epage>192116-3</epage><pages>192116-192116-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Electric and magnetic properties were investigated on
p
-type
Zn
1
−
x
Cr
x
Te
doped with nitrogen (N) as an acceptor. Thin films of
p
-
Zn
1
−
x
Cr
x
Te
(
x
≦
0.09
)
were grown by molecular-beam epitaxy with the supply of
N
2
gas excited by rf plasma. With the increase of Cr composition
x
at an almost fixed N concentration of the order of
10
20
cm
−
3
, the temperature dependence of resistivity changed from metallic behavior to an insulating one, accompanied with a significant decrease of the hole concentration. The magnetization measurements revealed that ferromagnetic behaviors observed in undoped
Zn
1
−
x
Cr
x
Te
were suppressed due to the nitrogen doping; with N concentrations of the order of
10
20
cm
−
3
, hysteresis loops in the magnetization curve disappeared, the magnitude of magnetization decreased, and the ferromagnetic transition were not observed down to 2 K according to the Arrott plot analysis. These experimental findings are discussed on the basis of the ferromagnetic double exchange interaction which is considered to work on the Cr
3
d
impurity level formed in the band gap of ZnTe.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.2130387</doi></addata></record> |
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issn | 0003-6951 1077-3118 |
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recordid | cdi_scitation_primary_10_1063_1_2130387Suppression_of_ferro |
source | American Institute of Physics:Jisc Collections:Transitional Journals Agreement 2021-23 (Reading list); AIP_美国物理联合会现刊(与NSTL共建) |
title | Suppression of ferromagnetism due to hole doping in Zn 1 − x Cr x Te grownby molecular-beam epitaxy |
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