Electroreflectance spectroscopy of Pt ∕ Al Ga N ∕ Ga N heterostructures exposed to gaseous hydrogen

The effect of hydrogen exposure on the properties of catalytic Pt ∕ Al Ga N ∕ Ga N heterostructures is investigated by electroreflectance spectroscopy. The technique is based on the analysis of the Franz-Keldysh oscillations observed above the AlGaN band gap and yields the electric-field strength in...

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Bibliographic Details
Published in:Applied physics letters 2006-01, Vol.88 (2), p.024101-024101-3
Main Authors: Winzer, A. T., Goldhahn, R., Gobsch, G., Dadgar, A., Krost, A., Weidemann, O., Stutzmann, M., Eickhoff, M.
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Summary:The effect of hydrogen exposure on the properties of catalytic Pt ∕ Al Ga N ∕ Ga N heterostructures is investigated by electroreflectance spectroscopy. The technique is based on the analysis of the Franz-Keldysh oscillations observed above the AlGaN band gap and yields the electric-field strength in the AlGaN barrier. From these data, the hydrogen-induced changes of the two-dimensional electron gas (2DEG) concentration underneath the catalytic gate contact are quantitatively determined. The exposure increases the 2DEG concentration by 1.7 × 10 12 e / cm 2 ( 1.3 × 10 12 e / cm 2 ) and decreases the Schottky barrier height by 0.85 V ( 0.65 V ) for barrier Al contents of 0.15 (0.20).
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2161394