Template-based assembling of Si Ge ∕ Si ( 001 ) islands by localanodic oxidation

Template-based Si Ge ∕ Si ( 001 ) island formation has been performed by a combination of local anodic oxidation and liquid phase epitaxy. In case of unidirectional stripes the island pattern directly follows along the trenches, whereas a squarelike stripe pattern enforces island nucleation within t...

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Bibliographic Details
Published in:Applied physics letters 2006-04, Vol.88 (17), p.173106-173106-3
Main Authors: Hanke, M., Boeck, T., Gerlitzke, A.-K.
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Summary:Template-based Si Ge ∕ Si ( 001 ) island formation has been performed by a combination of local anodic oxidation and liquid phase epitaxy. In case of unidirectional stripes the island pattern directly follows along the trenches, whereas a squarelike stripe pattern enforces island nucleation within the oxide-free cavities. The final island size significantly probes an effectively lowered lattice mismatch, thus a locally expanded crystal lattice in noncovered areas of the silicon substrate.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2198099