Deep trench etching combining aluminum thermomigrationand electrochemical silicon dissolution

A micromachining technique for silicon deep anisotropic etching and isolating porous silicon structures is developed. This original method combines aluminum thermomigration and silicon electrochemical etching. In this way, we have generated high aspect ratio trenches and porous silicon isolating reg...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 2006-05, Vol.88 (21), p.212501-212501-3
Main Authors: Gautier, G., Ventura, L., Jérisian, R., Kouassi, S., Leborgne, C., Morillon, B., Roy, M.
Format: Article
Language:
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A micromachining technique for silicon deep anisotropic etching and isolating porous silicon structures is developed. This original method combines aluminum thermomigration and silicon electrochemical etching. In this way, we have generated high aspect ratio trenches and porous silicon isolating regions as well, through the entire thickness of the wafer. In order to evaluate our method, we performed etching rate measurements varying the current density. A maximum value of 22 μ m ∕ min has been already measured. The interest of the method in terms of cost and structures diversity is also justified.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2206120