Recombination processes in midinfrared InGaAsSb diode lasers emittingat 2.37 μ m

The temperature dependence of the threshold current of In Ga As Sb ∕ Al Ga As Sb compressively strained lasers is investigated by analyzing the spontaneous emission from working laser devices through a window formed in the substrate metallization and by applying high pressures. It is found that nonr...

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Bibliographic Details
Published in:Applied physics letters 2006-08, Vol.89 (5), p.051104-051104-3
Main Authors: O'Brien, K., Sweeney, S. J., Adams, A. R., Murdin, B. N., Salhi, A., Rouillard, Y., Joullié, A.
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Summary:The temperature dependence of the threshold current of In Ga As Sb ∕ Al Ga As Sb compressively strained lasers is investigated by analyzing the spontaneous emission from working laser devices through a window formed in the substrate metallization and by applying high pressures. It is found that nonradiative recombination accounts for 80% of the threshold current at room temperature and is responsible for the high temperature sensitivity. The authors suggest that Auger recombination involving hot holes is suppressed in these devices because the spin-orbit splitting energy is larger than the band gap, but other Auger processes persist and are responsible for the low T 0 values.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.2243973